MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SQJQ148E-T1_JE3


MOSFETs
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Vishay 1100
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AUD 1.6746
Multiples of: 1

375 A40 V1.3 mOhmsN - Channel 3.5 V- 55 C+ 175 C325 WSMD/SMTPOWERPAK - 8X8 - 4Reel , Cut TapeSi1 Channel- 20 V , + 20 V69 nCEnhancement TrenchFET
SI7414DN-T1-GE3


Vishay Semiconductors MOSFET 60V 8.7A 3.8W 25mohm 10V
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Vishay 1100
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AUD 1.8312
Multiples of: 1

5.6 A60 V25 mOhmsN - Channel  - 55 C+ 150 C1.5 WSmd/SmtPOWERPAK - 1212 - 8ReelSi 20 V Enhancement Trenchfet/Powerpak
VX60M153PW-M3/P


MOSFETs 60A,150V,TRENCH SCHOTTKY RECT.
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Vishay 1099
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AUD 3.2507
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           Reel , Cut TapeSi      
AON3419-HXY


30V 32A 12mΩ@10V,15A 3.57W P Channel DFN-8L(3x3) MOSFETs ROHS
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HXY MOS 1099
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AUD 0.1717
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ZXMC3A16DN8TA


Mosfet Array N and P-Channel 30V 4.9A, 4.1A 1.25W Surface Mount 8-SO
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Diodes Incorporated 1099
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AUD 1.0458
Multiples of: 1

6.4 A30 V35 mOhmsN - Channel, P - Channel  - 55 C+ 150 C2.1 WSmd/SmtSO - 8Cut TapeSi2 Channel20 V Enhancement  
SIRA00DP-T1-GE3


Vishay Semiconductors MOSFET 30V 1mOhm10V 60A N-Ch G-IV
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Vishay 1098
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AUD 1.834
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           -       
SIA431DJ-T1-GE3


MOSFET 20V 12A 19W 25mohm @ 4.5V
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Vishay 1097
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AUD 0.4356
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12 A20 V70 mOhmsP - Channel 850 mV- 55 C+ 150 C19 WSMD/SMTSC - 70 - 6Reel , Cut TapeSi1 Channel- 8 V , 8 V60 nCEnhancement TrenchFET, PowerPAK
DMP6110SSDQ-13


MOSFET MOSFET BVDSS: 41V-60V
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Diodes Incorporated 1096
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AUD 0.5582
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           Cut Tape       
RV8C010UNHZGG2CR


N-Channel 20V 1A (Ta) 1W Surface Mount DFN1010-3W
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ROHM 878
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AUD 0.289
Multiples of: 1

1 A20 V470 mOhmsN - Channel 1 V- 55 C+ 150 C1 WSMD/SMTDFN - 3Reel , Cut TapeSi1 Channel- 8 V , + 8 V-Enhancement  
NVMYS012N10MCLTWG


MOSFETs MOSFET - Power, Single N-Channel 100 V, 12.2 mohm, 52 A
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ON Semiconductor 593
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AUD 1.0113
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52 A100 V18.3 mOhmsN - Channel 3 V- 55 C+ 175 C72 WSMD/SMTLFPAK - 4Reel , Cut TapeSi1 Channel- 20 V , + 20 V19 nCEnhancement  
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