MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IPBE65R075CFD7AATMA1


MOSFET AUTOMOTIVE
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Infineon 1097
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AUD 10.8358
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32 A650 V139 mOhmsN - Channel 4 V- 55 C+ 150 C171 WSMD/SMTTO - 263 - 7 - 11Coolmos , Cut Tape , Reel , ReelSi1 Channel- 20 V , + 20 V68 nCEnhancementAEC - Q101CoolMOS
OSD5N65C


650V 5A 2.3 32W TO-252 MOSFETs ROHS
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OSEN 1096
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AUD 0.1308
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DMC3025LNS-7


MOSFET MOSFET BVDSS 31V-40V
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Diodes Incorporated 1096
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AUD 0.3267
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           Cut Tape       
HSU3018B


MOSFET N Channel 30V 110A 2.5V @ 250uA 2.4mΩ @ 30A,10V TO-252 RoHS
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HUASHUO 1096
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AUD 0.3268
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NVMFWS0D9N04XMT1G


MOSFETs 40V T10M IN S08FL PACKAGE
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ON Semiconductor 1096
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AUD 1.7403
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273 A40 V900 uOhmsN - Channel 3.5 V- 55 C+ 175 C121 WSMD/SMTDFNW - 5Reel , Cut TapeSi1 Channel- 20 V , + 20 V61.3 nCEnhancement  
IPP045N10N3 G


MOSFET N-Ch 100V 100A TO220-3 OptiMOS 3
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Infineon 1096
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AUD 1.9373
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100 A100 V3.9 mOhmsN - Channel 2 V- 55 C+ 175 C214 WThrough HoleTO - 220TubeSi1 Channel20 V117 nCEnhancement Optimos
STL12P6F6


MOSFET P-CH 60V 0.13Ohm 3A STripFET VI
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STMicroelectronics 1095
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AUD 0.7347
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3 A- 60 V160 mOhmsP - Channel20 V2 v to 4 V- 55 C+ 175 C75 WSmd/SmtPowerflat - 8 5X6ReelSi1 Channel20 V6.4 nC  Stripfet
STD5N95K5


MOSFET N-CH 950V 2Ohm typ 3.5A Zener-protected
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STMicroelectronics 1095
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AUD 1.0454
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3.5 A950 V2 OhmsN - Channel 4 V- 55 C+ 150 C70 WSMD/SMTDPAK - 3 (TO - 252 - 3)Reel , Cut TapeSi1 Channel- 30 V , 30 V12.5 nCEnhancement MDmesh
NCE65T180D


MOSFET N Trench 650V 21A (Tc) 4V @ 250uA 180 mO @ 10.5A,10V TO-263-2 RoHS
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NCE Power 1085
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AUD 2.3865
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AP50N04K


40V 40A 10.5mΩ@20V,40A null TO-252 MOSFETs ROHS
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Quan Li 1081
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AUD 0.1795
Multiples of: 5

                   
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