MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRFP4568PBFXKMA1


MOSFETs Y
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Infineon 1828
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AUD 5.3194
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171 A150 V5.9 mOhmsN - Channel 3 V- 55 C+ 175 C517 WThrough HoleTO - 247AC - 3TubeSi1 Channel- 20 V , + 20 V151 nCEnhancement  
FDMC86102L


Transistor: N-MOSFET; unipolar; 100V; 41W; MLP8
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ON Semiconductor 1105
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AUD 1.1854
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   N Channel               
IPB036N12N3 G


MOSFET N-Ch 120V 180A D2PAK-6 OptiMOS 3
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Infineon 1103
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AUD 5.106
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180 A120 V2.9 mOhmsN - Channel 2 V- 55 C+ 175 C300 WSmd/SmtTO - 263 - 7ReelSi1 Channel20 V211 nCEnhancement Optimos
AUIRF3205ZS


Trans MOSFET N-CH 55V 110A Automotive 3-Pin(2+Tab) D2PAK Tube
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Infineon 1102
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AUD 2.1545
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           Rail/Tube    Enhancement  
PSMN6R0-25YLDX


MOSFET PSMN6R0-25YLD/LFPAK/REEL 7" Q1
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Nexperia 1101
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AUD 0.3087
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61 A25 V5.84 mOhmsN - Channel 1.2 V- 55 C+ 175 C43 WSmd/SmtLFPAK56 - 5ReelSi1 Channel20 V10.5 nCEnhancement  
SP30N03BTH


TO-252 MOSFETs ROHS
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Siliup 1100
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AUD 0.1088
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MOT5N50C


500V 5A 50W 1.2@10V,2.5A 4V@250uA 1PCSNChannel TO-251 MOSFETs ROHS
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MOT 1100
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AUD 0.2769
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DMN3008SFGQ-7


MOSFET MOSFET BVDSS: 25V-30V
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Diodes Incorporated 1100
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AUD 0.5549
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         Smd/SmtPowerdi3333 - 8Cut TapeSi    Aec - Q101 
IRF1404


TO-220 MOSFETs ROHS
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OSEN 1079
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AUD 0.7109
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FDB8832


N-Channel 30 V 34A (Ta), 80A (Tc) 300W (Tc) Surface Mount D²PAK (TO-263)
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ON Semiconductor 157
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AUD 3.6614
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   n - channel  - 55 C+ 175 C smd/smtTO - 263Reel       
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