MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
PMV120ENEAR


MOSFET PMV120ENEA/TO-236AB/REEL 7" Q3
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Nexperia 1328
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AUD 0.3832
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           Cut TapeSi      
STFI260N6F6


STMicroelectronics MOSFET N-channel 60 V 00024 ASTripFET Pwr MOSFET
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STMicroelectronics 1328
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AUD 3.5955
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80 A60 V3 mOhmsn - channel 4 V- 55 C+ 175 C41.7 Wthrough holeI2PAKFP - 3Tubesi1 channel20 V183 nC  stripfet
TDM3405


MOSFET P Trench 40V 17A 2.5V @ 250uA 9.4 mΩ @ 25A,10V DFN-8_5x6mm RoHS
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Techcode 1327
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AUD 0.6474
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IRF1405PBF


MOSFET N Trench 55V 169A 4V @ 250uA 5.3 mΩ @ 101A,10V TO-220 (TO-220-3) RoHS
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Infineon 1327
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AUD 0.9639
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133 A55 V5.3 mOhmsN - Channel    200 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V170 nC   
YFW120N10AD


100V 120A 6m@10V,1A 148W 3V@250A 1PCSNChannel TO-252 MOSFETs ROHS
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YFW Electronics 1326
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AUD 0.9589
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IRF820APBF-BE3


N-Channel 500V 2.5A (Tc) 50W (Tc) Through Hole TO-220AB
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Vishay 1326
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AUD 1.2778
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2.5 A500 V3 OhmsN - Channel 4.5 V- 55 C+ 150 C50 WThrough HoleTO - 220AB - 3TubeSi1 Channel- 30 V , + 30 V17 nCEnhancement  
NTTFS022N15MC


MOSFET PTNG 150V 22MOHM POWERCLIP33
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ON Semiconductor 1326
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AUD 2.0194
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47.2 A150 V22 mOhmsN - Channel 4.5 V- 55 C+ 175 C71.4 WSMD/SMT Reel , Cut TapeSi1 Channel- 20 V , + 20 V17 nCEnhancement  
IPP026N10NF2SAKMA1


MOSFET TRENCH >=100V
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Infineon 1326
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AUD 2.791
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184 A100 V2.6 mOhmsN - Channel 3.8 V- 55 C+ 175 C250 WThrough HoleTO - 220 - 3TubeSi1 Channel- 20 V , + 20 V103 nCEnhancement  
R8009KNXC7G


MOSFET High-speed Switching Nch 800V 9A Power MOSFET
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ROHM 1325
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AUD 3.0701
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9 A800 V600 mOhmsN - Channel 4.5 V- 55 C+ 150 C59 WThrough HoleTO - 220FM - 3TubeSi1 Channel- 20 V , + 20 V27 nCEnhancement  
BSL606SNH6327XTSA1


Transistor: N-MOSFET; unipolar; 60V; 4.5A; 2W; PG-TSOP-6
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Infineon 1316
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AUD 0.3231
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            Optimos 3      
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