MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IAUZN10S7N078ATMA1


MOSFETs OptiMOS 7 Power-Transistor
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 6331
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AUD 1.0163
Multiples of: 1

76 A100 V7.8 mOhmsN - Channel 3.2 V- 55 C+ 175 C94 WSMD/SMTPG - TDSON - 8Reel , Cut TapeSi1 Channel20 V22.2 nCEnhancement OptiMOS
NCE3018AS


MOSFET N Trench 30V 18A 1.4V @ 250uA 7 mΩ @ 12A,10V SOP-8_150mil RoHS
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NCE Power 1348
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AUD 0.1918
Multiples of: 5

                   
RJU002N06T106


N-Channel 60 V 200mA (Ta) 200mW (Ta) Surface Mount UMT3
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ROHM 1333
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AUD 0.059
Multiples of: 5

200 mA60 V2.2 OhmsN - Channel    200 mWSmd/SmtUMT - 3ReelSi1 Channel12 V Enhancement  
MOT100N02D


20V 100A 88W 2.8m@4.5V,30A 1.1V@250uA 1PCSNChannel TO-252 MOSFETs ROHS
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MOT 1333
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AUD 0.1451
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PSMN3R9-25MLC,115


MOSFET N-channel MOSFET logic level LFPAK33
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Nexperia 1333
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AUD 0.3546
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70 A25 V5.55 mOhmsN - Channel    69 WSmd/SmtSOT - 669 - 4ReelSi1 Channel1.95 V    
TN0606N3-G


Transistor: N-MOSFET; unipolar; 60V; 3A; 1W; TO92
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Microchip 1333
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AUD 0.9795
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500 mA60 V1.5 OhmsN - Channel 600 mV- 55 C+ 150 C1 WThrough HoleTO - 92BulkSi1 Channel10 V Enhancement  
IRFZ48RPBF


MOSFET N-Chan 60V 50 Amp
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Vishay 1332
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AUD 2.2164
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   N - Channel  - 55 C+ 175 C Through HoleTO - 220 - 3TubeSi      
SIRA18ADP-T1-GE3


MOSFET 30V Vds 20V Vgs PowerPAK SO-8
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Vishay 1327
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AUD 0.4008
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         Smd/SmtPOWERPAK - SO - 8Cut TapeSi     Trenchfet
IPD031N06L3 G


Infineon Technologies MOSFET N-Ch 60V 100A DPAK-2 OptiMOS 3
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Infineon 1280
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AUD 1.8881
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100 A60 V3.1 mOhmsN - Channel20 V2.2 V- 55 C+ 175 C167 WThrough HoleDPAK - 2ReelSi1 Channel20 V79 nCEnhancement Optimos
PXN012-60QLJ


MOSFET PXN012-60QL - N-channel 60 V, 11.5 mOhm, logic level Trench MOSFET in MLPAK33
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Nexperia 1207
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AUD 0.4332
Multiples of: 5

42 A60 V11.5 mOhmsN - Channel 2.5 V- 55 C+ 150 C34.7 mWSMD/SMTMLPAK33 - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V18.77 nCEnhancement  
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