MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SWD078R08E8T


80V 95A 8.6mΩ TO-252 MOSFETs ROHS
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Sam&wing 1338
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AUD 0.2821
Multiples of: 5

                   
IPW65R041CFDFKSA1


Infineon Technologies MOSFET N-Ch 700V 68.5A TO247-3 CoolMOS CFD2
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Infineon 1338
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AUD 18.3069
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68.5 A650 V37 mOhmsN - Channel 3.5 V- 55 C+ 150 C500 WThrough HoleTO - 247 - 3TubeSi1 Channel20 V300 nCEnhancement Coolmos
FDD120AN15A0


N-Channel 150 V 2.8A (Ta), 14A (Tc) 65W (Tc) Surface Mount TO-252AA
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ON Semiconductor 1337
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AUD 0.9946
Multiples of: 1

            Powertrench®      
SVD14N03RT4G


MOSFET NFET DPAK 25V 14A 95MO
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ON Semiconductor 1336
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AUD 0.4115
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           Cut TapeSi    Aec - Q101 
PSMN1R0-40YSHX


MOSFET PSMN1R0-40YSHSOT10234 LEADS
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Nexperia 1336
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AUD 2.1179
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290 A40 V1 mOhmsN - Channel 2.4 V- 55 C+ 175 C333 WSmd/SmtLFPAK56E - 4Cut TapeSi1 Channel20 V87 nCEnhancement  
IPI60R190C6


MOSFET 600V CoolMOSC6 Power Transistor
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Infineon 1336
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AUD 2.7381
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20.2 A650 V190 mOhmsN - Channel  - 55 C+ 150 C151 WThrough HoleTO - 262 - 3TubeSi1 Channel20 V63 nC  Coolmos
NTP011N15MC


N-Channel 150V 9.8A (Ta), 74.3A (Tc) 2.4W (Ta), 136.4W (Tc) Through Hole TO-220-3
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ON Semiconductor 1335
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AUD 2.7254
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74.3 A150 V10.9 mOhmsN - Channel 4.5 V- 55 C+ 175 C136.4 WSMD/SMT  Si1 Channel- 20 V , + 20 V37 nCEnhancement  
NVMFS5C673NLAFT1G-YE


MOSFETs TRENCH 6 60V NFET
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ON Semiconductor 1334
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AUD 0.5123
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50 A60 V9.2 mOhmsN - Channel 2 V- 55 C+ 175 C46 WSMD/SMTDFN - 5Reel , Cut TapeSi1 Channel20 V9.5 nCEnhancement  
SQ4917CEY-T1_BE3


MOSFETs DUAL P-CHANNEL 60-V (D-S) 175C MOSFET
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Vishay 1279
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AUD 0.9243
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8 A60 V61.2 mOhmsP - Channel 2.5 V- 55 C+ 175 C5 WSMD/SMTSO - 8 Si2 Channel20 V36.3 nCEnhancement  
CSD17573Q5B


Texas Instruments MOSFET 30V, N-channel NexFET Pwr MOSFET
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Texas Instruments 789
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AUD 0.8819
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332 A30 V1.45 mOhmsN - channel 1.1 V- 55 C+ 150 C195 WSmd/smtVSON - CLIP - 8ReelSi1_Channel+/- 20 V49 nCEnhancement Nexfet
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