MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
NCE30H29D


MOSFET N Trench 30V 290A 2.5V @ 250uA 1.8 mΩ @ 160A,10V TO-263-2 RoHS
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NCE Power 1353
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between Wed. 12 Aug to Mon. 17 Aug
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AUD 1.0578

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NVMFD020N10MCLT1G


MOSFETs PTNG 100V LL SO8FL DUAL
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ON Semiconductor 1343
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between Tue. 04 Aug to Thu. 06 Aug
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AUD 1.2194

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35 A100 V20 mOhmsN - Channel 3 V- 55 C+ 175 C55 WSMD/SMTDFN - 8Reel , Cut TapeSi2 Channel20 V15 nCEnhancement  
DMT10H015LPS-13


MOSFET BVDSS: 61V~100V POWERDI5060-8 T&R 2.5K
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Diodes Incorporated 1342
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between Tue. 04 Aug to Thu. 06 Aug
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AUD 0.8504

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44 A100 V16 mOhmsN - Channel 2 V- 55 C+ 150 C1.3 WSmd/SmtPowerdi5060 - 8Cut TapeSi1 Channel10 V33.3 nCEnhancement Powerdi
NVMFS5C628NLET1G-YE


MOSFETs TRENCH 6 60V NFET
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ON Semiconductor 1342
Ships to you
between Tue. 04 Aug to Thu. 06 Aug
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AUD 1.0183

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150 A60 V2.4 mOhmsN - Channel 2 V- 55 C+ 175 C46 WSMD/SMTDFN - 5Reel , Cut TapeSi1 Channel20 V52 nCEnhancement  
NVMFS5C410NWFHT1G


MOSFETs T6-D3F 40V NFET
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ON Semiconductor 1342
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between Tue. 04 Aug to Thu. 06 Aug
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AUD 1.4913

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300 A40 V920 uOhmsN - Channel 3.5 V- 55 C+ 175 C166 WSMD/SMTDFN - 5Reel , Cut TapeSi1 Channel20 V86 nCEnhancement  
NVMFS5C426NLWFT1G


MOSFET 40V 1.2 MOHM T6 S08FL SIN
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ON Semiconductor 1342
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between Tue. 04 Aug to Thu. 06 Aug
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AUD 2.4627

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237 A40 V1.2 mOhmsN - Channel 1.2 V- 55 C+ 175 C128 WSmd/SmtSO - 8FL - 8Cut TapeSi1 Channel20 V93 nCEnhancementAec - Q101 
DMP3008SFGQ-7


MOSFET 30V P-Ch Enh FET 20Vgss 0.9W -80A
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Diodes Incorporated 1341
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between Tue. 04 Aug to Thu. 06 Aug
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AUD 0.7536

Multiples of: 1

8.6 A30 V25 mOhmsP - Channel 2.1 V- 55 C+ 150 C2.2 WSmd/SmtPowerdi3333 - 8Cut TapeSi1 Channel20 V47 nCEnhancementAec - Q101 
STFI24N60M2


N-Channel 600 V 18A (Tc) 30W (Tc) Through Hole I2PAKFP (TO-281)
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STMicroelectronics 1341
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between Tue. 04 Aug to Thu. 06 Aug
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AUD 1.8552

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18 A600 V168 mOhmsN - Channel 3 V- 55 C+ 150 C30 WThrough HoleI2PAKFP - 3TubeSi1 Channel25 V29 nCEnhancement Mdmesh
FDMA530PZ


Transistor: P-MOSFET; unipolar; -30V; -6.8A; 2.4W; MicroFET
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ON Semiconductor 1340
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between Wed. 29 Jul to Tue. 04 Aug
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AUD 0.6343

Multiples of: 1

   P Channel               
FDD3672


Transistor: N-MOSFET; unipolar; 100V; 44A; 135W; TO252AA
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ON Semiconductor 1340
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between Wed. 12 Aug to Mon. 17 Aug
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AUD 1.3613

Multiples of: 1

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