MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRFB9N60APBF-BE3


N-Channel 600V 9.2A (Tc) 170W (Tc) Through Hole TO-220AB
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Vishay 1356
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AUD 2.4
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9.2 A600 V750 mOhmsN - Channel 4 V- 55 C+ 150 C170 WThrough HoleTO - 220AB - 3TubeSi1 Channel- 30 V , + 30 V49 nCEnhancement  
DMN32D2LDF-7


Diodes Incorporated MOSFET 350mw 30V DUAL
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Diodes Incorporated 1355
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AUD 0.1442
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400 mA30 V1.2 OhmsN - Channel  - 55 C+ 150 C280 mWSmd/SmtSOT - 353 - 5ReelSi2 Channel10 V Enhancement  
SQJ402EP-T1_BE3


MOSFETs N-CHANNEL 100-V (D-S) 175C MOSFET
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Vishay 1354
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AUD 1.1246
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32 A100 V11 mOhmsN - Channel 1.5 V- 55 C+ 175 C83 WSMD/SMTPOWERPAK - SO - 8 - 4Reel , Cut TapeSi1 Channel- 20 V , + 20 V34 nCEnhancement  
BSP295


SOT-223 MOSFETs ROHS
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TECH PUBLIC 1353
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AUD 0.1844
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JMTG130P04A


PDFN-8L(5x6) MOSFETs ROHS
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JieJie 1353
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AUD 0.2656
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IRFB4620PBF


Transistor: N-MOSFET; unipolar; 200V; 25A; 144W; TO220AB
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Infineon 1353
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AUD 1.4683
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25 A200 V72.5 mOhmsN - Channel  - 55 C+ 175 C144 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V25 nCEnhancement  
IPD90N04S4-05


Infineon Technologies MOSFET N-Ch 40V 90A DPAK-2 OptiMOS-T2
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Infineon 1352
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AUD 0.5796
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86 A40 V5.2 mOhmsN - Channel 2 V- 55 C+ 175 C65 WSmd/SmtTO - 252 - 3ReelSi1 Channel20 V37 nCEnhancementAec - Q101Optimos
NVTFS4C06NTAG


MOSFET NFET U8FL 30V 71A 4.2MOHM
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ON Semiconductor 1352
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AUD 1.0754
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71 A30 V4.2 mOhmsn - channel     smd/smtWDFN - 8Reelsi    aec - q101 
DMN3009LFV-7


MOSFET MOSFETBVDSS: 25V-30V
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Diodes Incorporated 1351
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AUD 0.2643
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60 A30 V3.5 mOhmsN - Channel 1 V- 55 C+ 150 C2 WSmd/SmtPowerdi3333 - 8Cut TapeSi1 Channel20 V42 nCEnhancement  
TX15N10


MOSFET N Channel 100V 15A(Tc) 3V @ 250uA 100mO @ 8A,10V TO-252 RoHS
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XDS 1227
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AUD 0.1626
Multiples of: 5

                   
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