MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRF630STRLPBF


Vishay Semiconductors MOSFET N-Chan 200V 9.0 Amp
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Vishay 1544
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AUD 1.21
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9 A200 V400 mOhmsN - Channel20 V - 55 C+ 150 C3 WSmd/SmtD2PAK - 3ReelSi   Enhancement  
RSU12N65D


650V 12A 450mΩ@10V,6A 80W null TO-252 MOSFETs ROHS
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REASUNOS 1543
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AUD 0.5374
Multiples of: 1

                   
IRFZ44RPBF-BE3


N-Channel 60V 50A (Tc) 150W (Tc) Through Hole TO-220AB
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Vishay 1543
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AUD 2.16
Multiples of: 1

50 A60 V28 mOhmsN - Channel 4 V- 55 C+ 175 C150 WThrough HoleTO - 220AB - 3TubeSi1 Channel- 20 V , + 20 V67 nCEnhancement  
APM2315AC


SOT23-3 MOSFETs ROHS
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JSMSEMI 1542
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AUD 0.0588
Multiples of: 10

                   
RZE002P02TL


ROHM Semiconductor MOSFET 1.2V DRVE PCH MOSFET
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ROHM 1542
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AUD 0.113
Multiples of: 10

200 mA- 20 V1.2 OhmsP - Channel - 1 V + 150 C150 mWSmd/SmtSOT - 416 - 3ReelSi1 Channel10 V1.4 nCEnhancement  
RSU2N65MD


TO-251 MOSFETs ROHS
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REASUNOS 1542
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AUD 0.1348
Multiples of: 5

                   
STF7N60DM2


MOSFET N-channel 600 V 0.78 Ohm typ. 6 A MDmesh DM2 Power MOSFET in a TO-220FP package
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STMicroelectronics 1542
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AUD 0.9063
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         Through HoleTO - 220FP - 3 Si     Mdmesh
VP0104N3-G


Transistor: P-MOSFET; unipolar; -40V; -0.5A; 1W; TO92
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Microchip 1542
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AUD 0.8646
Multiples of: 1

250 mA40 V8 OhmsP - Channel 1.5 V- 55 C+ 150 C1 WThrough HoleTO - 92BulkSi1 Channel- 10 V Enhancement  
WSF35P10


TO-252 MOSFETs ROHS
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Winsok 1522
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AUD 0.2666
Multiples of: 5

                   
DMN67D8LW-7


60V 240mA 320mW 5O@10V,500mA N Channel SOT-323-3 MOSFETs ROHS
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Diodes Incorporated 1406
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AUD 0.0457
Multiples of: 10

         Smd/SmtSOT - 323 - 3Cut TapeSi      
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