MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
WM02DN08D


Transistor: N-MOSFET x2; unipolar; SOT363
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Wayon 1541
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AUD 0.069
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IPP147N12N3 G


MOSFET N-Channel 120V MOSFET
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Infineon 1541
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AUD 1.3003
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56 A120 V14.7 mOhmsN - Channel  - 55 C+ 175 C107 WThrough HoleTO - 262 - 3TubeSi1 Channel20 V37 nC  Optimos
IAUTN06S5N008GATMA1


MOSFETs N
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Infineon 1541
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AUD 4.6955
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           Reel , Cut TapeSi    AEC - Q101OptiMOS
NTH4L045N065SC1


MOSFET SIC MOS TO247-4L 650V
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ON Semiconductor 1541
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AUD 12.1657
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55 A650 V50 mOhmsN - Channel 4.3 V- 55 C+ 175 C187 WThrough HoleTO - 247 - 4TubeSi1 Channel- 8 V , + 22 V105 nCEnhancement  
NTMFS003P03P8ZT1G


MOSFETs PFET SO8FL -30V 3MO
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ON Semiconductor 1538
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AUD 1.4551
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234 A30 V1 mOhmsP - Channel 3 V- 55 C+ 150 C139 WSMD/SMTSO - 8FLReel , Cut TapeSi1 Channel- 25 V , + 25 V277 nCEnhancement  
SE20P03


MOSFET P Trench 30V 19A 3V @ 250uA 50 mΩ @ 10A,10V TO-252-2 (DPAK) RoHS
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SINO-IC 1537
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AUD 0.0913
Multiples of: 5

                   
IXTA130N10T-TRL


MOSFET N-CH 100V 130A TO263
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IXYS 1526
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AUD 5.4647
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BSZ110N06NS3GATMA1


MOSFET TRENCH 40<-<100V
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Infineon 1517
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AUD 0.5309
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           Reel      Optimos
NSS085N100P5


100V 9.5m@10V,20A 1.7V@250uA 1PCSNChannel PDFN5x6 MOSFETs ROHS
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NH 1486
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AUD 0.457
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IPTG014N10NM5ATMA1


100V 1.4mO@150A,10V N Channel HSOG-8-1 MOSFETs ROHS
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Infineon 1422
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AUD 4.7448
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366 A100 V1.4 mOhmsN - Channel 3.8 V- 55 C+ 175 C375 WSMD/SMTHSOG - 8Cut Tape , ReelSi1 Channel- 20 V , + 20 V169 nCEnhancement  
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