MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
HSL0107


100V 1.5A 520mΩ@10V,1A 1.5W 1.5V@250uA 20pF@15V P Channel 553pF@15V 4.5nC@4.5V -55℃~+150℃@(Tj) SOT-223 MOSFETs ROHS
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HUASHUO 3462
Ships to you
between Fri. 07 Aug to Wed. 12 Aug
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AUD 0.1056

Multiples of: 5

                   
IRF7809AVTR(UMW)


SOP-8 MOSFETs ROHS
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Youtai 1556
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between Fri. 07 Aug to Wed. 12 Aug
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AUD 0.1529

Multiples of: 5

                   
IPD30N08S2-22


MOSFET OPTIMOS PWR-TRANS N-CH 75V30A 21.5mOhm
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Infineon 1556
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between Thu. 30 Jul to Mon. 03 Aug
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AUD 1.2303

Multiples of: 1

30 A75 V17.4 mOhmsN - Channel 2.1 V- 55 C+ 175 C136 WSmd/SmtTO - 252ReelSi1 Channel20 V57 nCEnhancementAec - Q101Optimos
IRFB9N60APBF


N-Channel 600 V 9.2A (Tc) 170W (Tc) Through Hole TO-220AB
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Vishay 1556
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between Thu. 30 Jul to Mon. 03 Aug
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AUD 2.0687

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9.2 A600 V750 mOhmsN - Channel 2 V- 55 C+ 150 C170 WThrough HoleTO - 220AB - 3TubeSi1 Channel10 V49 nCEnhancement  
IAUTN15S6N025GATMA1


MOSFETs 150 V, N-Ch, 3.8 mOhms max, Automotive MOSFET, TOLT (10x15)
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Infineon 1556
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between Thu. 30 Jul to Mon. 03 Aug
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AUD 8.1925

Multiples of: 1

245 A150 V2.5 mOhmsN - Channel 4 V- 55 C+ 175 C357 WSMD/SMTPG - HSOG - 8 - 1Reel , Cut TapeSi1 Channel20 V107 nCEnhancement OptiMOS
IRFZ48NPBF


Transistor: N-MOSFET; unipolar; 55V; 64A; 94W; TO220AB
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Infineon 1555
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between Fri. 07 Aug to Wed. 12 Aug
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AUD 0.5005

Multiples of: 1

            Hexfet®      
IRFZ40PBF


MOSFET N-Chan 50V 50 Amp
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Vishay 1554
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between Thu. 30 Jul to Mon. 03 Aug
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AUD 1.7075

Multiples of: 1

   N - Channel  - 55 C+ 150 C Through HoleTO - 220 - 3TubeSi      
ECH8651R-TL-H


ON Semiconductor MOSFET NCHNCH 4V DRIVE SERIES
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ON Semiconductor 1553
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between Thu. 30 Jul to Mon. 03 Aug
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AUD 0.5106

Multiples of: 1

10 A24 V14 mOhmsN - Channel  - 55 C+ 150 C1.4 WSmd/SmtECH - 8ReelSi2 Channel12 V    
SK22P04-P8


SOP-8 MOSFETs ROHS
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Shikues 1537
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between Fri. 07 Aug to Wed. 12 Aug
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AUD 0.1684

Multiples of: 5

                   
STD4NK50ZT4


Transistor: N-MOSFET; unipolar; 500V; 1.9A; 45W; DPAK
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STMicroelectronics 99
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between Fri. 07 Aug to Wed. 12 Aug
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AUD 0.7566

Multiples of: 1

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