MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
NTGS3441T1G


MOSFET 20V 1A P-Channel
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ON Semiconductor 4478
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AUD 0.2331
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1 A20 V90 mOhmsP - Channel  - 55 C+ 150 C2 WSmd/SmtTSOPReelSi1 Channel8 V Enhancement  
NCE3035Q


MOSFET N Trench 30V 35A (Tc) 3V @ 250uA 7 mΩ @ 12A,10V DFN-3x3_EP RoHS
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NCE Power 1727
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AUD 0.2654
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SDM017G10DB


TO-252 MOSFETs ROHS
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SINEDEVICE 1569
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AUD 0.3832
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PSMN8R5-40MSDX


MOSFET PSMN8R5-40MSDX
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Nexperia 1568
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AUD 0.3924
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60 A40 V8.5 mOhmsN - Channel 2.15 V- 55 C+ 175 C59 WSMD/SMTLFPAK - 4Cut Tape , Reel , ReelSi1 Channel- 20 V , + 20 V19 nCEnhancement  
IRF9540PBF-BE3


P-Channel 100V 19A (Tc) 150W (Tc) Through Hole TO-220AB
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Vishay 1567
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AUD 1.1739
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19 A100 V200 mOhmsP - Channel 4 V- 55 C+ 175 C150 WThrough HoleTO - 220AB - 3TubeSi1 Channel- 20 V , + 20 V61 nCEnhancement  
NVMFS5C646NLAFT1G


60V 93A 3.8mO@10V,50A 79W N Channel DFN-5(5.9x4.9) MOSFETs ROHS
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ON Semiconductor 1549
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AUD 1.691
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93 A60 V3.8 mOhmsN - Channel 1.2 V- 55 C+ 175 C79 WSmd/SmtSO - FL - 8Cut TapeSi1 Channel10 V33.7 nCEnhancementAec - Q100 
DMHC3025LSD-13


MOSFET 30V Comp ENH Mode H-Bridge 20V VGSS
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Diodes Incorporated 1527
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AUD 0.3524
Multiples of: 5

6 A , 4.2 A30 V25 mOhms , 50 mOhmsN And P - Channel 1 V- 55 C+ 150 C1.5 WSmd/SmtSO - 8ReelSi4 Channel10 v , - 10 V11.7 nC , 11.4 nCEnhancement  
STW15NK50Z


Transistor: N-MOSFET; unipolar; 500V; 8.8A; 160W; TO247
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STMicroelectronics 984
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AUD 4.4407
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            Mdmesh      
WSD20L75DN


MOSFET P Trench 20V 75A (Tc) 1V @ 250uA 6 mΩ @ 20A,4.5V DFN 3x3-8 RoHS
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Winsok 597
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AUD 0.4241
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IPD053N06N


Infineon Technologies MOSFET N-Ch 60V 45A DPAK-2
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Infineon 502
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AUD 0.4491
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45 A60 V5.3 mOhmsN - Channel 2.1 V- 55 C+ 175 C83 WSmd/SmtDPAK - 3ReelSi1 Channel20 V27 nCEnhancement Optimos
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