MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
YJD60N04A


Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 40V; 42A; 35W
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Yangjie 1552
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AUD 0.217
Multiples of: 5

            Trench Power Lv      
2N7000-G


Transistor: N-MOSFET; unipolar; 60V; 0.2A; TO92
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Microchip 1552
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AUD 0.6668
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200 mA60 V5 Ohmsn - channel 800 mV- 55 C+ 150 C1 Wthrough holeTO - 92Bulksi1 channel10 V enhancement  
IRF9Z34NSTRRPBF


International Rectifier MOSFET 1 P-CH -55V HEXFET 100mOhms 23.3nC
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Infineon 1552
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AUD 0.9535
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19 A- 55 V100 mOhmsP - Channel20 V - 55 C+ 175 C68 WSmd/SmtD - PAK - 3ReelSi1 Channel20 V23.3 nCEnhancement  
IRF9540NSTRRPBF


International Rectifier MOSFET 1 P-CH -100V HEXFET 117mOhms 64.7nC
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Infineon 1552
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AUD 1.3069
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- 23 A- 100 V117 mOhmsP - Channel20 V- 4 V- 55 C+ 175 C3.8 WSmd/SmtD - PAK - 3ReelSi1 Channel20 V64.7 nCEnhancement  
IRFZ46ZSTRLPBF


MOSFET MOSFT 55V 51A 13.6mOhm 31nC
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Infineon 1552
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AUD 1.4535
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51 A55 V13.6 mOhmsN - Channel 4 V + 175 C82 WSmd/SmtD2PAKReelSi1 Channel 46 nC   
IRLH5030TRPBF


International Rectifier MOSFET 100V 1 N-CH HEXFET 9mOhms 44nC
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Infineon 1552
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AUD 1.546
Multiples of: 400

88 A100 V9.9 mOhmsN - Channel16 V2.5 V- 55 C+ 150 C3.6 WSmd/SmtPQFN - 8ReelSi1 Channel16 V44 nC   
FQB4N80TM


MOSFET 800V N-Channel QFET
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ON Semiconductor 1552
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AUD 1.6812
Multiples of: 800

3.9 A800 V3.6 OhmsN - Channel  - 55 C+ 150 C3.13 WSmd/SmtTO - 263ReelSi1 Channel30 V Enhancement  
YFW2P15MI


SOT-23-3L MOSFETs ROHS
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YFW Electronics 1522
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AUD 0.3377
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BSP297


SOT-223-4 MOSFETs ROHS
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TECH PUBLIC 1474
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AUD 0.2738
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OSD9N50C


500V 9A 60W 680m TO-252 MOSFETs ROHS
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OSEN 1416
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AUD 0.222
Multiples of: 5

                   
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