MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SSM6L09FUTE85LF


Mosfet Array N and P-Channel 30V 400mA, 200mA 300mW Surface Mount US6
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Toshiba 4728
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AUD 0.1852
Multiples of: 5

400 mA30 V4 OhmsN - Channel, P - Channel 1.8 v , - 1.8 V  300 mWSmd/SmtSOT - 363 - 6ReelSi2 Channel     
AON6512


MOSFET N CH 30V 30A DFN5X6
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Alpha & Omega 2206
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AUD 0.5012
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NP12N10G-Y-G


TO-252-2L MOSFETs ROHS
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NATLINEAR 1818
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AUD 0.1203
Multiples of: 5

                   
TM80N03D


30V 80A 7m TO-252-3L MOSFETs ROHS
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Tritech-MOS 1818
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AUD 0.1551
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Hot IRFR9014PBF


P-Channel 60 V 5.1A (Tc) 2.5W (Ta), 25W (Tc) Surface Mount D-Pak
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Vishay 1818
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AUD 0.2398
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5.1 A60 V500 mOhmsP - Channel 2 V- 55 C+ 150 C25 WSmd/SmtTO - 252 - 3TubeSi1 Channel10 V12 nCEnhancement  
IPD60R145CFD7ATMA1


N-Channel 600 V 16A (Tc) 83W (Tc) Surface Mount DPAK (TO-252)
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Infineon 1818
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AUD 2.9683
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16 A600 V145 mOhmsN - Channel 3.5 V- 55 C+ 150 C83 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel20 V31 nCEnhancement  
IPT60R120CM8XTMA1


MOSFETs 600V CoolMOS CM8 Power Transistor
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Infineon 1816
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AUD 2.1836
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24 A600 V120 mOhmsN - Channel 4.7 V- 55 C+ 150 C154 WSMD/SMTPG - HSOF - 8Reel , Cut TapeSi1 Channel- 20 V to + 20 V24 nCEnhancement CoolMOS
IRFI4110GPBF


Transistor: N-MOSFET; unipolar; 100V; 72A; 61W; TO220FP
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Infineon 1816
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AUD 3.153
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72 A100 V3.7 mOhmsN - Channel    61 WThrough HoleTO - 220 - 3 FPTubeSi 20 V190 nC   
Hot IRFU9310PBF


MOSFET P-Chan 400V 1.8 Amp
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Vishay 1814
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AUD 0.7675
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1.8 A400 V7 OhmsP - Channel 4 V- 55 C+ 150 C50 WThrough HoleTO - 251 - 3TubeSi1 Channel- 20 V , 20 V13 nCEnhancement  
STD3N62K3


Transistor: N-MOSFET; unipolar; 620V; 1.7A; 45W; DPAK
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STMicroelectronics 1814
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AUD 0.5753
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2.7 A620 V2.5 OhmsN - Channel 3 V- 55 C+ 150 C45 WSMD/SMTDPAK - 3 (TO - 252 - 3)Reel , Cut TapeSi1 Channel- 30 V , 30 V13 nCEnhancement MDmesh
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