MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SQJ457EP-T1_GE3


MOSFET P Ch -60Vds 20Vgs AEC-Q101 Qualified
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Vishay 7713
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AUD 1.0605
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- 36 A- 60 V21 mOhmsP - Channel - 2.5 V- 55 C+ 175 C68 WSmd/SmtPOWERPAK - SO - 8L - 4Cut TapeSi1 Channel20 V100 nCEnhancementAec - Q101Trenchfet
SKG85G06A


PDFN-8L(5x6) MOSFETs ROHS
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Shikues 1823
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AUD 0.6764
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STD18N60M6


MOSFET PTD HIGH VOLTAGE
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STMicroelectronics 1821
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AUD 2.3612
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13 A600 V280 mOhmsN - Channel 3.25 V- 55 C+ 150 C110 WSmd/SmtDPAK - 3  1 Channel25 V16.8 nCEnhancement  
DMN65D8L-7


MOSFET N-Ch Enh Mode FET 60V 3ohm 310mA
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Diodes Incorporated 1821
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AUD 0.0815
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310 mA60 V3 OhmsN - Channel 1.2 V- 55 C+ 150 C540 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V0.87 nCEnhancement  
IPD30N06S215ATMA2


Infineon Technologies MOSFET
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Infineon 1820
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AUD 1.031
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30 A55 V11.3 mOhmsN - Channel 3 V- 55 C+ 175 C136 WSmd/SmtTO - 252 - 3ReelSi1 Channel+/- 20 V41 nCEnhancementAec - Q101 
NVMTS0D7N04CTXG


MOSFET AFSM T6 40V SG NCH
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ON Semiconductor 1820
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AUD 7.0761
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 40 V N - Channel       Cut Tape     Aec - Q101 
AO4406-MS


30V 12A 12mΩ@10V,12A 3.1W 2.5V@250uA 40pF@15V N Channel 610pF@15V 11nC@10V +150℃@(Tj) SOP-8 MOSFETs ROHS
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MSKSEMI 1818
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AUD 0.0834
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MOT5N50BD


TO-252-2 MOSFETs ROHS
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MOT 1818
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AUD 0.105
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NCE65T180


650V 21A 150mO@10V,10.5A 188W N Channel TO-220 MOSFETs ROHS
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NCE Power 1796
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AUD 2.6222
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IPD50N10S3L-16


Infineon Technologies MOSFET N-Ch 100V 50A DPAK-2 OptiMOS-T
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Infineon 1775
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AUD 1.4513
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50 A100 V15 mOhmsN - Channel20 V1.2 V- 55 C+ 175 C100 WSmd/SmtDPAK - 3ReelSi1 Channel10 V49 nCEnhancementAec - Q101Optimos
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