MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BSS806NEH6327XTSA1


Transistor: N-MOSFET; unipolar; 20V; 2.3A; 0.5W; SOT23
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Infineon 18202
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AUD 0.1018
Multiples of: 1

            Optimos 2      
AON3611-HXY


30V 20A 10.8W 1PCSN-Channel&1PCSP-Channel DFN-8L(3x3) MOSFETs ROHS
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HXY MOS 1826
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AUD 0.1614
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LSG65R950HT


MOSFET N Trench 650V 4A 4.5V @ 250uA 950 mΩ @ 2A,10V TO-252 RoHS
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Lonten Semiconductor 1826
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AUD 0.323
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NVD5C486NT4G


MOSFET T6 40V DPAK EXP
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ON Semiconductor 1826
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AUD 1.0393
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           Cut Tape       
TK8P65W,RQ


MOSFET PWR MOSFET PD=80W F=1MHZ
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Toshiba 1826
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AUD 1.5442
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7.8 A650 V670 mOhmsN - Channel 2.5 V- 55 C+ 150 C80 WSmd/SmtDPAK - 3Cut TapeSi1 Channel10 V16 nCEnhancement Dtmosiv
IPB100N04S4H2ATMA1


MOSFET N-Ch 40V 100A D2PAK-2 OptiMOS-T2
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Infineon 1825
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AUD 1.4415
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100 A40 V2.1 mOhmsN - Channel 2 V- 55 C+ 175 C115 WSmd/SmtTO - 263 - 3Cut TapeSi1 Channel20 V90 nCEnhancementAec - Q101 
RQ1C075UNTR


ROHM Semiconductor MOSFET
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ROHM 1824
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AUD 0.4724
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7.5 A20 V40 mOhmsN - Channel 300 mV- 55 C+ 150 C1.5 WSmd/SmtT SMT - 8Reel-1 Channel+/- 10 V18 nCEnhancement  
SSM3J332R(XBLW)


30V 4.2A 1 Piece P-Channel SOT-23-3L MOSFETs ROHS
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XBLW 1823
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AUD 0.0409
Multiples of: 10

                   
AP3415E


20V 4A 35mΩ@4.5V,4A 1.25W P Channel SOT-23 MOSFETs ROHS
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Quan Li 1823
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AUD 0.0832
Multiples of: 20

                   
2N7002KW-TP


MOSFET N-Ch Enh FET 60Vds 20Vgs 340mA 200mW
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Micro Commercial Components (MCC) 1823
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AUD 0.094
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340 mA60 V5 OhmsN - Channel 1 V- 55 C+ 150 C200 mWSmd/SmtSOT - 323 - 3Cut TapeSi1 Channel10 V    
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