MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SISS40DN-T1-GE3


MOSFET 100V .0210ohm@10V 36.5A N-Ch T-FET
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Vishay 1813
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AUD 0.9164
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           Cut TapeSi     Trenchfet
IPB80N04S4-04


Infineon Technologies MOSFET N-Ch 40V 80A D2PAK-2 OptiMOS-T2
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Infineon 1813
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AUD 2.0769
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80 A40 V4.2 mOhmsN - Channel  - 55 C+ 175 C71 WSmd/SmtD2PAK - 3ReelSi1 Channel20 V33 nC Aec - Q101Optimos
R6022YNX3C16


MOSFETs Nch 600V 22A, TO-220AB, Power MOSFET: R6022YNX3 is a power MOSFET with low on - resistance, suitable for switching.
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ROHM 1812
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AUD 2.6925
Multiples of: 1

 600 V N - Channel   + 150 C Through HoleTO - 220AB - 3TubeSi1 Channel     
SIJH400E-T1-GE3


MOSFETs N-CHANNEL 40-V (D-S) 175C MOSFET
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Vishay 1812
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AUD 4.6463
Multiples of: 1

608 A40 V520 uOhmsN - Channel 2.4 V- 55 C+ 175 C385 WSMD/SMTPOWERPAK 8X8L Si1 Channel- 16 V , + 20 V220 nCEnhancement  
DP4080


TO-252 MOSFETs ROHS
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Developer Microelectronics 1811
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AUD 0.1884
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IRFBE30PBF-BE3


N-Channel 800V 4.1A (Tc) 125W (Tc) Through Hole TO-220AB
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Vishay 1811
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AUD 1.4366
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          TO - 220 - 3TubeMosfet (Metal Oxide)      
DMN3026LVTQ-7


MOSFET MOSFET BVDSS
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Diodes Incorporated 1810
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AUD 0.2463
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         Smd/SmtTSOT - 26 - 6Cut TapeSi    Aec - Q101 
NCV8413DTRKG


MOSFET Protected Low-Side Smart Discrete FET
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ON Semiconductor 1810
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AUD 1.691
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           Cut Tape       
PMV20XNEA


SOT-23 MOSFETs ROHS
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Leiditech 1809
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AUD 0.0945
Multiples of: 5

                   
CSD15380F3


MOSFET 20-V, N channel NexFET power MOSFET, single LGA 0.6 mm x 0.7 mm, 1460 mOhm, gate ESD protection 3-PICOSTAR -55 to 150
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Texas Instruments 1682
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AUD 0.0846
Multiples of: 5

0.5 A20 V2220 mOhmsN - channel 1.1 V- 55 C+ 150 C500 mWSmd/smtQFN - 3ReelSi1_Channel10 V0.216 nCEnhancement Picostar
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