MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
JMTQ35N06A


60V 35A 41W 12m@10V,30A 1.6V@250uA 1PCSNChannel PDFN-8L(3.3x3.3) MOSFETs ROHS
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JieJie 2779
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AUD 0.2293
Multiples of: 5

                   
NCE30H10AK


TO-252-2L MOSFETs ROHS
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NCE Power 1838
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AUD 0.2742
Multiples of: 5

                   
BVSS123LT1G


MOSFET NFET 100V 170MA 6OH
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ON Semiconductor 1809
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AUD 0.1797
Multiples of: 1

170 mA100 V6 OhmsN - Channel 1.6 V- 55 C+ 150 C225 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V EnhancementAec - Q101 
RS4N65D


650V 4A 107W 2.4Ω@10V,2A null TO-252 MOSFETs ROHS
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REASUNOS 1809
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AUD 0.2297
Multiples of: 5

                   
IRFU3410PBF


MOSFET MOSFT 100V 31A 39mOhm 37nC
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Infineon 1809
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AUD 0.711
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31 A100 V39 mOhmsN - Channel    110 WThrough HoleIPAKTubeSi1 Channel20 V37 nC   
SH8K37GZETB


MOSFET 60V NCH+NCH MIDDLE PWR
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ROHM 1809
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AUD 1.209
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5.5 A60 V46 mOhmsN - Channel 1.3 V- 55 C+ 150 C2 WSmd/SmtSOP - 8Cut TapeSi2 Channel20 V9.7 nCEnhancement  
TK9P65W,RQ


N-Channel 650 V 9.3A (Ta) 80W (Tc) Surface Mount DPAK
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Toshiba 1808
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AUD 1.2721
Multiples of: 1

9.3 A650 V460 mOhmsN - Channel 2.5 V- 55 C+ 150 C80 WSmd/SmtTO - 252 - 3ReelSi1 Channel30 V20 nCEnhancement  
SI4430BDY-T1-E3


MOSFET 30V 20A 0.0045Ohm
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Vishay 1807
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AUD 1.604
Multiples of: 1

   N - Channel  - 55 C+ 150 C Smd/SmtSOIC - 8 NarrowReel      Trenchfet
SUD19P06-60-GE3


MOSFET 60V 19A 38.5W 60mohm @ 10V
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Vishay 1806
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AUD 0.728
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18.3 A60 V60 mOhmsP - Channel 1 V- 55 C+ 150 C38.5 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel10 V26 nCEnhancement Trenchfet
AP6679GH-HF


MOSFET P Trench 30V 75A (Tc) 3V @ 250uA 9 mΩ @ 30A,10V TO-252-2 (DPAK) RoHS
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APEC 1758
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AUD 0.7381
Multiples of: 1

                   
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