MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
DMP2045U


SOT-23 MOSFETs ROHS
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TECH PUBLIC 1813
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AUD 0.0852
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BSC035N10NS5


MOSFET TRENCH >=100V
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Infineon 1807
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AUD 2.7135
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IRF9358TRPBF


Transistor: P-MOSFET; unipolar; -30V; -9.2A; 2W; SO8
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Infineon 1804
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AUD 0.6879
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9.2 A30 V13 mOhmsP - Channel    2 WSmd/SmtSOIC - 8ReelSi2 Channel20 V19 nC   
FDD2582


Transistor: N-MOSFET; unipolar; 150V; 21A; 95W; TO252AA
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ON Semiconductor 1804
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AUD 0.8259
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            Powertrench®      
IRFR110TRLPBF


Vishay Semiconductors MOSFET N-Chan 100V 4.3 Amp
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Vishay 1803
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AUD 0.7224
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4.3 A100 V540 mOhmsN - Channel  - 55 C+ 150 C2.5 WSmd/SmtDPAK - 3ReelSi 20 V Enhancement  
AG091FLD3HRBTL


MOSFETs TO252 N-CH 60V 80A
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ROHM 1803
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AUD 1.1427
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80 A60 V7.5 mOhmsN - Channel 2.5 V- 55 C+ 175 C76 WSMD/SMTTO - 252 - 3Reel , Cut TapeSi1 Channel20 V22 nCEnhancementAEC - Q101 
IPP082N10NF2SAKMA1


100V 8.2mO@50A,10V N Channel TO-220-3 MOSFETs ROHS
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Infineon 1800
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AUD 1.1722
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77 A100 V8.2 mOhmsN - Channel 3.8 V- 55 C+ 175 C100 WThrough Hole TubeSi1 Channel- 20 V , + 20 V28 nCEnhancement  
50N03


TO-252 MOSFETs ROHS
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GOODWORK 1799
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AUD 0.081
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JMTK60N04B


TO-252 MOSFETs ROHS
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JieJie 1799
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AUD 0.1608
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IRF5305STRLPBF


MOSFET P Trench 55V 31A 4V @ 250uA 60 mΩ @ 16A,10V TO-263-2 RoHS
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Infineon 1777
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AUD 1.2119
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