MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
STB20NM50FDT4


STMicroelectronics MOSFET N-Ch 500 Volt 20 Amp
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STMicroelectronics 1852
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AUD 4.5806
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20 A500 V250 mOhmsN - Channel  - 65 C+ 150 C192 WSmd/SmtD2PAK - 3ReelSi1 Channel30 V38 nCEnhancement Fdmesh
IPT60R037CM8XTMA1


MOSFETs 600V CoolMOS CM8 Power Transistor
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Infineon 1852
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AUD 6.9284
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70 A600 V37 mOhmsN - Channel 4.7 V- 55 C+ 150 C390 WSMD/SMTHSOF - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V79 nCEnhancement CoolMOS
NTMFS4C08NT1G


ON Semiconductor MOSFET
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ON Semiconductor 1851
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AUD 0.9346
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52 A30 V5.8 mOhmsN - Channel20 V2.1 V- 55 C+ 150 C2.51 WSmd/SmtSO - 8FLReelSi1 Channel20 V18.2 nC   
FDD16AN08A0


Transistor: N-MOSFET; unipolar; 75V; 50A; 135W; DPAK
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ON Semiconductor 1851
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AUD 2.1731
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            Powertrench®      
PSMN2R8-40YSBX


MOSFETs SOT669 N CHAN 40V
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Nexperia 1850
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AUD 0.619
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160 A40 V2.8 mOhmsN - Channel 3.6 V- 55 C+ 175 C147 WSMD/SMTPOWER - SO8 - 4 Si1 Channel- 20 V , + 20 V42 nCEnhancement  
RD3G400GNTL


MOSFET NCH 40V 40A POWER
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ROHM 1850
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AUD 0.9314
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40 A40 V7.5 mOhmsN - Channel 1 V- 55 C+ 150 C26 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel20 V19 nCEnhancement  
IRFBC40APBF-BE3


N-Channel 600V 6.2A (Tc) 125W (Tc) Through Hole TO-220AB
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Vishay 1850
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AUD 1.9385
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6.2 A600 V1.2 OhmsN - Channel 4 V- 55 C+ 150 C125 WThrough HoleTO - 220 - 3TubeSi1 Channel- 30 V , 30 V42 nCEnhancement  
RCJ451N20TL


MOSFET RCJ451N20 is a power MOSFET with low on-resistance and fast switching, suitable for the switching application.
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ROHM 1850
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AUD 2.5612
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45 A200 V55 mOhmsN - Channel 5 V- 55 C+ 150 C211 WSMD/SMTTO - 263S - 3Reel , Cut TapeSi1 Channel- 30 V , 30 V80 nCEnhancement  
IRFIBF30GPBF


N-Channel 900 V 1.9A (Tc) 35W (Tc) Through Hole TO-220-3
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Vishay 1850
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AUD 2.8896
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           TubeSi      
IPB011N04L G


MOSFET OptiMOS 3 PWR TRANS 40V 180A
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Infineon 1850
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AUD 4.4722
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180 A40 V800 uOhmsN - Channel 1.2 V- 55 C+ 175 C250 WSmd/SmtTO - 263ReelSi1 Channel20 V346 nCEnhancement Optimos
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