MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
RVQ040N05TR


MOSFET Med Pwr, Sw MOSFET N Chan, 45V, 4A
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ROHM 2871
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AUD 0.3409
Multiples of: 5

4 A45 V53 mOhmsN - Channel    1.25 WSmd/SmtT SMT - 6ReelSi1 Channel21 V Enhancement  
TK560A65Y,S4X(S


TO-220SIS MOSFETs ROHS
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Toshiba 1866
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AUD 0.9285
Multiples of: 1

                   
IRF9610SPBF


P-Channel 200 V 1.8A (Tc) 3W (Ta), 20W (Tc) Surface Mount D²PAK (TO-263)
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Vishay 1866
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AUD 1.3955
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1.8 A200 V3 OhmsP - Channel 4 V- 55 C+ 150 C20 WSMD/SMTTO - 263 - 3TubeSi1 Channel- 20 V , 20 V11 nCEnhancement  
NVB082N65S3F


MOSFET SUPERFET3 650V D2PAK PKG
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ON Semiconductor 1866
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AUD 7.2896
Multiples of: 1

40 A650 V82 mOhmsN - Channel 3 V- 55 C+ 150 C313 WSmd/SmtD2PAK - 3Cut TapeSi1 Channel30 V81 nCEnhancement Superfet Iii
IRFZ20PBF


MOSFET N-Chan 50V 17 Amp
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Vishay 1865
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AUD 1.3594
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15 A50 V100 mOhmsn - channel 2 V- 55 C+ 150 C40 Wthrough holeTO - 220 - 3Tubesi1 channel10 V12 nCenhancement  
SI1330EDL-T1-BE3


N-Channel 60V 240mA (Ta) 280mW (Ta) Surface Mount SC-70-3
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Vishay 1864
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AUD 0.234
Multiples of: 3000

250 mA60 V2.5 OhmsN - Channel 2.5 V- 55 C+ 150 C280 mWSMD/SMTSOT - 323 - 3Cut Tape , ReelSi1 Channel- 20 V , + 20 V400 pCEnhancement TrenchFET
MMD60R580PBRH


Trans MOSFET N-CH 600V 8A 3-Pin(2+Tab) DPAK T/R
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Magnachip 1864
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AUD 0.5571
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PJQ5544-AU_R2_002A1


MOSFETs 40V N-Channel Enhancement Mode MOSFET
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Panjit 1864
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AUD 0.9588
Multiples of: 1

130 A40 V3.3 mOhmsN - Channel 2.3 V- 55 C+ 175 C100 WSMD/SMTDFN - 5060 - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V41 nCEnhancementAEC - Q101 
NDD60N900U1T4G


MOSFET NFET DPAK 600V 5.9A
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ON Semiconductor 1864
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AUD 1.0888
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5.7 A600 V820 mOhmsN - Channel 2 V- 55 C+ 150 C74 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel25 V12 nCEnhancement  
NP3400MR-S-G


SOT-23-3L MOSFETs ROHS
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NATLINEAR 1862
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AUD 0.028
Multiples of: 20

                   
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