MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRFR540ZTRPBF-TP


TO-252 MOSFETs ROHS
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TECH PUBLIC 1878
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AUD 0.4759
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FDPC8012S


Fairchild Semiconductor MOSFET 25V Asymmetric Dual N-Channel Pwr Trench
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ON Semiconductor 1870
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AUD 0.8964
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88 A25 V7.5 Ohmsn - channel12 V1.6 V- 55 C+ 150 C2 Wsmd/smtPowerclip - 33 - 8Reelsi2 channel12 V25 nC  powertrench syncfet power clip
DMP4013LFGQ-13


MOSFET MOSFET BVDSS: 31V-40V
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Diodes Incorporated 1869
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AUD 0.5878
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         Smd/SmtPowerdi3333 - 8Cut TapeSi    Aec - Q101 
FDS2572


Transistor: N-MOSFET; unipolar; 150V; 3.1A; 2.5W; SO8
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ON Semiconductor 1869
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AUD 1.1022
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            Ultrafet®      
YJG88G12A


PDFN5060-8L MOSFETs ROHS
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Yangjie 1869
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AUD 1.3083
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RX3L07BBGC16


MOSFETs RX3L07BBG is a power MOSFET with low on-resistance and High power package, suitable for switching.
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ROHM 1869
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AUD 2.5776
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105 A60 V6.5 mOhmsN - Channel 2.5 V- 55 C+ 150 C89 WThrough HoleTO - 220 - 3TubeSi1 Channel- 20 V , + 20 V16.7 nCEnhancement  
JMTP4435A


SOP-8 MOSFETs ROHS
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JieJie 1867
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AUD 0.0981
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HSM6113


MOSFET P Channel 60V 4.1A 2.5V @ 250uA 90mΩ @ 3A,10V SOP-8 RoHS
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HUASHUO 1867
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AUD 0.2472
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SIJH402E-T1-GE3


MOSFETs N-CHANNEL 40-V (D-S) 175C MOSFET
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Vishay 1867
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AUD 3.2672
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NCE30P28Q


MOSFET DFN3.3X3.3-8L RoHS
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NCE Power 1265
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AUD 0.3802
Multiples of: 5

                   
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