MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IPG20N06S4L-26


MOSFET N-Ch 60V 20A TDSON-8 OptiMOS-T2
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Infineon 1874
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AUD 1.376
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20 A60 V21 mOhms , 21 mOhmsN - Channel 1.2 V- 55 C+ 175 C33 WSmd/SmtTDSON - 8ReelSi2 Channel16 V20 nC , 20 nCEnhancementAec - Q101Optimos
ASDM100R160NKQ-R


100V 45A 72W 14mΩ@10V,20A 1.8V@250uA 18pF@50V N Channel 1135pF@50V 16nC@10V -55℃~+150℃@(Tj) TO-252 MOSFETs ROHS
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Ascend 1862
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AUD 0.4586
Multiples of: 5

                   
SIHFR9220TR-GE3


MOSFETs MOSFET P-CHANNEL 200V
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Vishay 1862
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AUD 0.5549
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            Si      
AG096FPD3HRBTL


MOSFETs Nch 100V 59A, TO-252 (DPAK), Power MOSFET for Automotive
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ROHM 1861
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AUD 1.164
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59 A100 V15.8 mOhmsN - Channel 2.5 V- 55 C+ 175 C76 WSMD/SMTTO - 252 - 3Reel , Cut TapeSi1 Channel- 20 V , + 20 V17.3 nCEnhancement  
IRFB4310ZPBF


MOSFET N Trench 100V 120A 4V @ 150uA 6 mΩ @ 75A,10V TO-220 (TO-220-3) RoHS
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Infineon 1861
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AUD 1.4673
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127 A100 V4.8 mOhmsN - Channel    250 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V120 nC   
R8002ANJGTL


MOSFETs TO263 800V 2A N-CH MOSFET
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ROHM 1861
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AUD 1.9866
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2 A800 V4.3 OhmsN - Channel 5 V- 55 C+ 150 C62 WSMD/SMTTO - 263S - 3Reel , Cut TapeSi1 Channel- 30 V , 30 V13 nCEnhancement  
STP85NF55


MOSFET N-Ch 55 Volt 80 Amp
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STMicroelectronics 1861
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AUD 2.8567
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   N - Channel  - 55 C+ 175 C Through HoleTO - 220Tube       
DMPH1006UPSQ-13


MOSFET MOSFET BVDSS: 8V-24V
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Diodes Incorporated 1859
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AUD 0.6797
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80 A12 V4 mOhmsP - Channel 1 V- 55 C+ 175 C3.2 WSmd/SmtPowerdi5060 - 8Cut TapeSi1 Channel8 V124 nCEnhancementAec - Q101 
DMP26M7UFG-7


MOSFET 20V P-Ch Enh FET 12Vgss PPAP
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Diodes Incorporated 1858
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AUD 0.7103
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- 40 A- 20 V9 mOhmsP - Channel - 400 mV- 55 C+ 150 C41 WSmd/SmtPOWERDI - 3333Reel-1 Channel+/- 10 V156 nCEnhancement Powerdi
IPW65R045C7FKSA1


Transistor: N-MOSFET; unipolar; 650V; 46A; 227W; PG-TO247-3
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Infineon 933
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AUD 11.0899
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