MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
YFW60N04AD


40V 60A 7mΩ@10V,20A 39W 1V@250uA null TO-252 MOSFETs ROHS
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YFW Electronics 1872
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AUD 0.1749
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IPB044N15N5ATMA1


MOSFET TRENCH >=100V
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Infineon 1860
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AUD 2.8691
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174 A150 V3.4 mOhmsN - Channel 3 V- 55 C+ 175 C300 WSmd/SmtTO - 263 - 7ReelSi1 Channel20 V100 nCEnhancement Optimos
RS6L090BHTB1


MOSFETs Discrete Semiconductors, MOSFETs, Nch 60V 90A, HSOP8, Power MOSFET
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ROHM 1858
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AUD 1.2018
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           Reel , Cut Tape       
STB95N4F3


MOSFET N-Ch 40V 5.0mOhm 80A STripFET III
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STMicroelectronics 1858
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AUD 1.7884
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80 A40 V5.8 mOhmsN - Channel  - 55 C+ 175 C110 WSmd/SmtD2PAKReelSi1 Channel20 V40 nCEnhancementAec - Q101 
UJ4C075060K3S


N-Channel 750V 28A (Tc) 155W (Tc) Through Hole TO-247-3
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UnitedSiC 1858
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AUD 11.4433
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28 A750 V74 mOhmsN - Channel 6 V- 55 C+ 175 C155 WThrough HoleTO - 247 - 3TubeSiC1 Channel- 20 V , + 20 V37.8 nCEnhancement SiC FET
SI2305ADS


SOT-23 MOSFETs ROHS
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TECH PUBLIC 1857
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AUD 0.0762
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WSF4022


MOSFET TO-252-4L RoHS
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Winsok 1857
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AUD 0.265
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IPB021N10NM5LF2ATMA1


MOSFETs OptiMOS 5 Linear FET 2, 100 V
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Infineon 1855
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AUD 4.9582
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176 A100 V2 mOhmsN - Channel 3.9 V- 55 C+ 175 C375 WSMD/SMTPG - TO - 263 - 3Reel , Cut TapeSi1 Channel+ 20 V165 nCEnhancement OptiMOS 5
WM06N30MS


Transistor: N-MOSFET; unipolar; SOT23
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Wayon 1854
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AUD 0.0731
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NCE3090K


MOSFET N Trench 30V 90A (Tc) 2.5V @ 250uA 5.8 mΩ @ 20A,10V TO-252-2 (DPAK) RoHS
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NCE Power 1668
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AUD 0.1386
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