MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BSS126


SOT-23 MOSFETs ROHS
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TECH PUBLIC 1901
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AUD 0.298
Multiples of: 5

                   
R8019KNXC7G


MOSFETs 800V 19A, TO-220FM, High-speed switching Power MOSFET: The R8xxxKNx series are high-speed switching products, Super Junction MOSFETs, that place an emphasis on high efficiency. This series products achieve higher efficiency via high-speed switching.
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ROHM 1898
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AUD 5.9925
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19 A800 V265 mOhmsN - Channel 4.5 V- 55 C+ 150 C83 WThrough HoleTO - 220FM - 3TubeSi1 Channel- 20 V , + 20 V65 nCEnhancement  
STF15N60M2-EP


STMicroelectronics MOSFET
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STMicroelectronics 1897
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AUD 1.1624
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11 A600 V378 mOhmsN - Channel 2 V- 55 C+ 150 C25 WThrough HoleTO - 220FP - 3 Si1 Channel25 V17 nCEnhancement Mdmesh
FDC6305N


20V 4.8A 22mO@4.5V,4.8A 2 N-Channel TSOP-6-1.5mm MOSFETs ROHS
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VBsemi Elec 1896
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AUD 0.1725
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PJD11N06A-AU_L2_000A1


MOSFET 60V N-Channel Enhancement Mode MOSFET
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Panjit 1896
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AUD 0.2404
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NCE30NP1812K


30V 36mΩ@10V,10A 25W 1PCSN-Channel&1PCSP-Channel TO-252-4 MOSFETs ROHS
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NCE Power 1896
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AUD 0.2672
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RX3R10BBHC16


MOSFETs RX3R10BBH is a power MOSFET with low on-resistance and high power small mold package, suitable for switching.
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ROHM 1896
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AUD 6.3209
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105 A150 V10.8 mOhmsN - Channel 4 V- 55 C+ 150 C181 WThrough HoleTO - 220 - 3TubeSi1 Channel- 20 V , + 20 V130 nCEnhancement  
NVD5890NT4G


ON Semiconductor MOSFET 8-64MHZ 3.3V GP EMI
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ON Semiconductor 1895
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AUD 1.2274
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123 A40 V2.9 mOhmsN - Channel20 V3.5 V- 55 C+ 175 C107 WSmd/SmtDPAK - 3ReelSi1 Channel20 V74 nC Aec - Q101 
IPB020NE7N3 G


MOSFET N-Ch 75V 120A D2PAK-2 OptiMOS 3
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Infineon 1895
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AUD 4.1045
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120 A75 V2 mOhmsN - Channel 2.3 V- 55 C+ 175 C300 WSmd/SmtTO - 263 - 3ReelSi1 Channel10 V155 nCEnhancement Optimos
CRTD082NE6N


65V 87A 99W 6.9mΩ@10V,40A 3V@250uA 225pF@32V N Channel 3275pF@32V -55℃~+150℃@(Tj) TO-252 MOSFETs ROHS
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CRMICRO 1891
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AUD 0.2402
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