MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BSC082N10LSGATMA1


Transistor: N-MOSFET; unipolar; 100V; 100A; 156W; PG-TDSON-8
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Infineon 1901
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AUD 2.2991
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            optimos 2      
IRF3703PBF


N-Channel 30 V 210A (Tc) 3.8W (Ta), 230W (Tc) Through Hole TO-220AB
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Infineon 1900
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AUD 2.3885
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210 A30 V2.8 mOhmsN - Channel  - 55 C+ 175 C230 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V209 nCEnhancement  
LMAK50N10


TO-252 MOSFETs ROHS
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Leiditech 1899
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AUD 0.5358
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SI4435DYTRPBF


MOSFET P Trench 30V 8A 1V @ 250uA 20 mΩ @ 8A,10V SOIC-8_150mil RoHS
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Infineon 1899
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AUD 0.6728
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8 A30 V35 mOhmsP - Channel  - 55 C+ 150 C2.5 WSmd/SmtSOIC - 8ReelSi1 Channel20 V40 nCEnhancement  
IPB016N06L3 G


Infineon Technologies MOSFET N-Ch 60V 180A D2PAK-6 OptiMOS 3
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Infineon 1899
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AUD 3.2857
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180 A60 V1.6 mOhmsN - Channel20 V1.2 V- 55 C+ 175 C250 WSmd/SmtTO - 263 - 7ReelSi1 Channel20 V166 nCEnhancement Optimos
IPB60R199CPATMA1


Transistor: N-MOSFET; unipolar; 600V; 16A; 139W; PG-TO263-3
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Infineon 1898
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AUD 2.4299
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            Coolmos Cp      
R6009JNXC7G


MOSFET NCH 600V 9A POWER
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ROHM 1898
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AUD 2.7582
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9 A600 V585 mOhmsN - Channel 5 V- 55 C+ 150 C53 WThrough HoleTO - 220FM - 3TubeSi1 Channel30 V22 nCEnhancement Prestomos
STL36N55M5


STMicroelectronics MOSFET N-Ch 550V 0.066Ohm 31A MDmesh M5
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STMicroelectronics 1898
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AUD 4.1537
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22.5 A550 V90 mOhmsn - channel 4 V- 55 C+ 150 C150 Wsmd/smtPowerflat - 4Reelsi1 channel 62 nC  mdmesh
WSP4984


MOSFET 2 N Channel (Dual) 40V 10A (Tc) 2.7V @ 250uA 20 mΩ @ 6.6A,10V SOP-8_150mil RoHS
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Winsok 1897
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AUD 0.2704
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S100P06F


PDFN-8L(5x6) MOSFETs ROHS
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HL 1808
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AUD 0.8162
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