MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
2319


40V 4A 63mΩ 2.5V P Channel SOT-23 MOSFETs ROHS
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HL 4811
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AUD 0.0355
Multiples of: 20

                   
BUK7Y43-60EX


MOSFET N-channel 60 V 43 mOhm MOSFET
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Nexperia 1904
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AUD 0.2922
Multiples of: 1

22 A60 V29.8 mOhmsN - Channel20 V3 V- 55 C+ 175 C45 WSmd/SmtLFPAK56 - 4ReelSi1 Channel20 V10.4 nC   
R6006KNXC7G


MOSFETs TO220 600V 6A N-CH MOSFET
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ROHM 1904
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AUD 1.691
Multiples of: 1

6 A600 V830 mOhmsN - Channel 5 V- 55 C+ 150 C40 WThrough HoleTO - 220FM - 3TubeSi1 Channel- 20 V , 20 V12 nCEnhancement  
HP8JE5TB1


MOSFETs -100V 12.5A, Dual Pch+Pch, HSOP8, Power MOSFET: HP8JE5 is a low on-resistance MOSFET ideal for Switching and Motor drives applications.
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ROHM 1902
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AUD 1.5909
Multiples of: 1

12.5 A100 V127 mOhmsP - Channel 2.5 V- 55 C+ 150 C21 WSMD/SMTHSOP - 8Reel , Cut TapeSi2 Channel- 20 V , + 20 V38 nCEnhancement  
TSM3N90CZ C0G


MOSFET MOSFET, Single, N-Ch Planar, 900V, 2.5A
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Taiwan Semiconductor 1902
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AUD 1.6418
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2.5 A900 V4.3 OhmsN - Channel 2 V- 55 C+ 150 C94 WThrough HoleTO - 220 - 3TubeSi1 Channel10 V17 nCEnhancement  
RCJ331N25TL


MOSFET RCJ331N25 is a power MOSFET with low on-resistance and fast switching, suitable for the switching application.
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ROHM 1902
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AUD 2.5448
Multiples of: 1

33 A250 V105 mOhmsN - Channel 5 V- 55 C+ 150 C211 WSMD/SMTTO - 263S - 3Reel , Cut TapeSi1 Channel- 30 V , + 30 V80 nCEnhancement  
WSF18N15


150V 17A 95mΩ@10V,10A 72.6W 2.5V@250uA N Channel TO-252 MOSFETs ROHS
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Winsok 1901
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AUD 0.517
Multiples of: 1

                   
2312A


20V 5.2A 20mΩ 1V N Channel SOT23 MOSFETs ROHS
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HL 1901
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AUD 0.0185
Multiples of: 20

                   
TPM138ES3


SOT-23 MOSFETs ROHS
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TECH PUBLIC 1901
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AUD 0.023
Multiples of: 20

                   
FDN358P(UMW)


SOT-23 MOSFETs ROHS
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Youtai 931
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AUD 0.0419
Multiples of: 10

                   
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