IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IXGF36N300


IXYS IGBT Transistors
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

IXYS 0
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AUD 65.8027
Multiples of: 25

         TubeSi     
IXYH25N250CHV


TO-247 IGBT Transistors / Modules ROHS
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Littelfuse 0
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AUD 66.4857
Multiples of: 1

                
6MBP50XTC065-50


IGBT Transistors / Modules ROHS
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Fuji 0
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AUD 67.0741
Multiples of: 1

                
IXBF32N300


IGBT Transistors IGBT BIMSFT-VERY HIVOLT
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

IXYS 0
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AUD 67.4455
Multiples of: 1

Single3 kV2.8 V+/- 20 V40 A+/- 100 nA  ISOPLUS - I4 - 3 SiThrough Hole160 W- 55 C+ 150 C 
IXYN50N170CV1


IGBT Transistors 1700V/120A High Volt
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IXYS 0
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AUD 71.063
Multiples of: 1

Single1700 V2.8 V20 V120 A100 nA  SOT - 227B - 4TubeSiSmd/Smt880 W- 55 C+ 175 C 
MG75HF12MIC1-A1-0000


IGBTs ROHS
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Yangjie 0
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AUD 71.2638
Multiples of: 1

                
APT45GP120JDQ2


IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS 7 - Combi
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Microchip 0
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AUD 71.654
Multiples of: 1

         TubeSi     
APT50GT120JRDQ2


IGBT Transistors IGBT NPT Medium Frequency Combi 1200 V 50 A ISOTOP
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Microchip 0
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AUD 72.0892
Multiples of: 1

          NPT     
GD100HFX65C1S


IGBTs ROHS
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AUD 72.3
Multiples of: 1

                
MMIX1X340N65B4


Discrete Semiconductor Modules DISC IGBT SMPD PKG-STANDARD
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IXYS 0
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AUD 73.2388
Multiples of: 1

Single          Smd/Smt1200 W- 55 C+ 175 C 
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