IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

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Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
SGM50PA12A6BTFD


- IGBTs ROHS
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AUD 39.5211

Multiples of: 1

                
IXXN200N60B3H1


IGBT Transistors XPT 600V IGBT GenX3 XPT IGBT
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AUD 39.5301

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         TubeSi    Ixxn200n60
IXYH25N250CHV


IGBT Transistors 2500V/95A , HV XPT IGBT
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AUD 39.5386

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Single2500 V3.4 V20 V95 A+/- 100 nA  TO - 247PLUS - HV - 3TubeSiThrough Hole937 W- 55 C+ 175 CHigh Voltage
SGM75HF12A1TLD


- IGBTs ROHS
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AUD 39.8764

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IXBT42N170A


IGBT Transistors IGBT BIMOSFET-HIGH VOLT
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AUD 41.1224

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Single1700 V5.2 V20 V    TO - 268 - 3TubeSiSmd/Smt - 55 C+ 150 C 
IXBR42N170


IGBT Transistors 57Amps 1700V
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IXYS 0
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AUD 41.4464

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        ISOPLUS 247 - 3TubeSiThrough Hole   Ixbr42n170
KWRFF75R12SWM


IGBTs ROHS
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AUD 42.1331

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IXYX200N65B3


Transistor: IGBT; GenX3™; 650V; 200A; 1.56kW; PLUS247™
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AUD 42.2507

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      1.56 kW   Genx3, Xpt     
KWGFP25R12NS3


IGBTs ROHS
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AUD 42.3372

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ESJ75SH120AN


FD-7 IGBT Transistors / Modules ROHS
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AUD 42.4711

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