IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IXYX25N250CV1


IGBT Transistors 2500V/95A , HV XPT IGBT Copacked
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

IXYS 0
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AUD 39.4299
Multiples of: 1

Single2500 V3.4 V20 V95 A+/- 100 nA  TO - 247PLUS - 3TubeSiThrough Hole937 W- 55 C+ 175 C 
MMIX1X100N60B3H1


IGBT Transistors DISC IGBT SMPD PKG-STANDARD
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IXYS 0
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AUD 39.4299
Multiples of: 1

         TubeSi     
SGM50PA12A6BTFD


- IGBTs ROHS
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AUD 39.5211
Multiples of: 1

                
IXYH25N250CHV


IGBT Transistors 2500V/95A , HV XPT IGBT
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

IXYS 0
6 to 16 Weeks Calender.png

AUD 39.5386
Multiples of: 1

Single2500 V3.4 V20 V95 A+/- 100 nA  TO - 247PLUS - HV - 3TubeSiThrough Hole937 W- 55 C+ 175 CHigh Voltage
SGM75HF12A1TLD


- IGBTs ROHS
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AUD 39.8764
Multiples of: 1

                
ESJ75SH120AN


FD-7 IGBT Transistors / Modules ROHS
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MASPOWER 0
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AUD 40.2264
Multiples of: 1

                
VS-GA200SA60UP


IGBT Transistors N-Ch 600 Volt 100A
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Vishay 0
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AUD 41.063
Multiples of: 1

Single600 V +/- 20 V    SOT - 227 - 4TubeSiSmd/Smt - 55 C+ 150 C 
IXBT42N170A


IGBT Transistors IGBT BIMOSFET-HIGH VOLT
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IXYS 0
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AUD 41.1224
Multiples of: 1

Single1700 V5.2 V20 V    TO - 268 - 3TubeSiSmd/Smt - 55 C+ 150 C 
IXYH8N250CHV


Discrete Semiconductor Modules Disc IGBT XPT-Hi Voltage TO-247AD
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IXYS 0
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AUD 41.3313
Multiples of: 1

Single       TO - 247HV - 3Tube Through Hole280 W- 55 C+ 175 C 
IXBR42N170


IGBT Transistors 57Amps 1700V
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IXYS 0
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AUD 41.4464
Multiples of: 1

        ISOPLUS 247 - 3TubeSiThrough Hole   Ixbr42n170
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