IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IXGR60N60C3C1


IGBT Transistors G-SERIES GENX3SIC IGBT 600V 30A
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

IXYS 0
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AUD 34.7684
Multiples of: 1

 600 V2.2 V+/- 20 V75 A100 nA  ISOPLUS 247 - 3TubeSicThrough Hole170 W- 55 C+ 150 CIxgr60n60
IXGX32N170H1


IXYS IGBT Transistors 32 Amps 1700V 2.5 Rds
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

IXYS 0
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AUD 34.9479
Multiples of: 1

Single1.7 kV2.5 V+/- 20 V75 A100 nA  PLUS 247 - 3TubeSiThrough Hole350 W- 55 C+ 150 CIxgx32n170
APT35GP120B2D2G


IGBT Transistors IGBT PT MOS 7 Combi 1200 V 35 A TO-247 MAX
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Microchip 0
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AUD 35.1077
Multiples of: 1

      543 W   POWER MOS 7®, PT     
IXYH8N250CV1HV


Discrete Semiconductor Modules Disc IGBT XPT-Hi Voltage TO-247AD
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

IXYS 0
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AUD 35.25
Multiples of: 1

Single       TO - 247HV - 3Tube Through Hole280 W- 55 C+ 175 C 
IXB200I600NA


IGBT Transistors XPT Single IGBT
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

IXYS 0
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AUD 35.3684
Multiples of: 1

         Tube      
IXGX32N170AH1


IXYS IGBT Transistors 24 Amps 1700V 5 Rds
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IXYS 0
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AUD 35.5233
Multiples of: 1

Single1.7 kV4 V+/- 20 V32 A100 nA  PLUS 247 - 3TubeSiThrough Hole350 W- 55 C+ 150 CIxgx32n170
VS-GP250SA60S


IGBT Module PT, Trench Single 600 V 380 A 893 W Chassis Mount SOT-227
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Vishay 0
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AUD 37.0033
Multiples of: 1

Single600 V-20 V380 A+/- 350 nA  SOT - 227 SiChassis893 W- 40 C+ 150 C 
IXBH40N160


IGBT Transistors 1600V 33A
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

IXYS 0
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AUD 37.0397
Multiples of: 1

Single1600 V 20 V    TO - 247AD - 3TubeSiThrough Hole350 W- 55 C+ 150 CIxbh40n160
IXYK200N65B3


Transistor: IGBT; GenX3™; 650V; 200A; 1.56kW; TO264
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IXYS 0
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AUD 37.8836
Multiples of: 1

      1.56 kW   Genx3, Planar, Xpt     
IXXN100N60B3H1


IGBT Transistors XPT 600V IGBT GenX3 w/Diode
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IXYS 0
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AUD 39.5838
Multiples of: 300

         TubeSi    Planar
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