IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
APT35GP120B2D2G


IGBT Transistors IGBT PT MOS 7 Combi 1200 V 35 A TO-247 MAX
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Microchip 0
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AUD 35.1077
Multiples of: 1

      543 W   POWER MOS 7®, PT     
IXYH8N250CV1HV


Discrete Semiconductor Modules Disc IGBT XPT-Hi Voltage TO-247AD
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

IXYS 0
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AUD 35.25
Multiples of: 1

Single       TO - 247HV - 3Tube Through Hole280 W- 55 C+ 175 C 
IXB200I600NA


IGBT Transistors XPT Single IGBT
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

IXYS 0
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AUD 35.3684
Multiples of: 1

         Tube      
IXGX32N170AH1


IXYS IGBT Transistors 24 Amps 1700V 5 Rds
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IXYS 0
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AUD 35.5233
Multiples of: 1

Single1.7 kV4 V+/- 20 V32 A100 nA  PLUS 247 - 3TubeSiThrough Hole350 W- 55 C+ 150 CIxgx32n170
SGM100HF12A1TFD


- IGBTs ROHS
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Silan 0
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AUD 35.7654
Multiples of: 1

                
ESJ100SH120AN


FD-7 IGBT Transistors / Modules ROHS
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MASPOWER 0
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AUD 36.2093
Multiples of: 1

                
IXGP30N60C3C1


IGBT Transistors G-SERIES GENX3SIC IGBT 600V 30A
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IXYS 0
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AUD 36.2277
Multiples of: 1

         TubeSic    Ixgp30n60
IXBH40N160


IGBT Transistors 1600V 33A
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IXYS 0
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AUD 37.0397
Multiples of: 1

Single1600 V 20 V    TO - 247AD - 3TubeSiThrough Hole350 W- 55 C+ 150 CIxbh40n160
IXYK200N65B3


Transistor: IGBT; GenX3™; 650V; 200A; 1.56kW; TO264
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IXYS 0
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AUD 37.8836
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      1.56 kW   Genx3, Planar, Xpt     
IXGK120N120B3


IGBT Transistors 200Amps 1200V
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IXYS 0
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AUD 38.0712
Multiples of: 1

         TubeSi    Ixgk120n120
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