IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IXGB200N60B3


IGBT Transistors GenX3 600V IGBT
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

IXYS 0
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AUD 27.4685
Multiples of: 1

Single600 V1.35 V20 V75 A100 nA  PLUS 264 - 3TubeSiThrough Hole1.25 kW- 55 C+ 150 CIxgb200n60
IXYK100N120C3


IGBT Transistors 1200V 188A XPT IGBT
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

IXYS 0
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AUD 27.6493
Multiples of: 1

Single1200 V2.9 V30 V188 A100 nA  TO - 264 - 3TubeSiThrough Hole1150 W- 55 C+ 175 CIxyk100n120
IXYK110N120C4


IGBT Transistors XPT thin-wafer technology, 4th generation (Gen 4) Trench IGBT. Disc IGBT Gen 4 XPT TO264
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

IXYS 0
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AUD 28.1914
Multiples of: 300

Single1200 V - 30 V , + 30 V310 A    TubeSiThrough Hole1360 W- 55 C+ 175 C1200V XPTTM Gen 8
IXXK100N60B3H1


IGBT Transistors XPT IGBT B3-Class 600V/190Amp CoPacked
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

IXYS 0
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AUD 28.6114
Multiples of: 1

 600 V1.8 V20 V190 A100 nA  TO - 264 - 3TubeSiThrough Hole695 W- 55 C+ 150 CIxxk100n60
IXYK140N90C3


IGBT Transistors IGBT XPT-GENX3
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

IXYS 0
6 to 16 Weeks Calender.png

AUD 28.72
Multiples of: 1

        TO - 264 - 3TubeSiThrough Hole   Planar
IXGH30N60C3C1


IGBT Transistors G-SERIES GENX3SIC IGBT 600V 30A
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

IXYS 0
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AUD 28.7657
Multiples of: 1

         Tube     Ixgh30n60
IXGL200N60B3


IGBT Transistors 150Amps 600V
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IXYS 0
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AUD 29.4904
Multiples of: 1

         TubeSi    Ixgl200n60
APT50GN60BDQ3G


IGBT Transistors IGBT Fieldstop Low Frequency Combi 600 V 50 A TO-247
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Microchip 0
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AUD 29.52
Multiples of: 1

      366 W   Field Stop     
NTE3323


Transistor: IGBT; 1.2kV; 25A; 200W; TO3P
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AUD 29.589
Multiples of: 1

      200 W         
APT75GN120B2G


IGBT Transistors FG, IGBT, 1200V, TO-247 T-MAX, RoHS
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Microchip 0
6 to 16 Weeks Calender.png

AUD 29.7877
Multiples of: 1

      833 W   Field Stop     
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