IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

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Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IXGX120N60B


IGBT Transistors 76 Amps 600V 2.1 Rds
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IXYS 0
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AUD 21.5614

Multiples of: 1

         -      
IXGR16N170AH1


IXYS IGBT Transistors 8 Amps 1700V 5.2 Rds
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IXYS 0
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AUD 21.5836

Multiples of: 1

Single1.7 kV4.2 V+/- 20 V16 A100 nA  Isoplus247 - 3TubeSiThrough Hole120 W- 55 C+ 150 CIxgr16n170
APT40GR120B2SCD10


IGBT Transistors Insulated Gate Bipolar Transistor - Power MOS 8
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Microchip 0
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AUD 21.6127

Multiples of: 1

         TubeSi     
APT80GA90S


IGBT Transistors FG, IGBT, 900V, TO-268
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Microchip 0
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AUD 21.7538

Multiples of: 1

      625 W   POWER MOS 8®, PT     
STGE50NC60VD


IGBT Transistors N-chnl 50A-600V PowerMESH
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STMicroelectronics 0
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AUD 21.84

Multiples of: 1

        ISO TO P - 4Tube      
IXGN60N60C2D1


IGBT Transistors 60 Amps 600V 1.7 V Rds
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IXYS 0
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AUD 22.0257

Multiples of: 1

Single Dual Emitter600 V2.5 V+/- 20 V    SOT - 227B - 4Tube Smd/Smt - 55 C+ 150 CIxgn60n60
IXYH16N250C


Transistor: IGBT; XPT™; 2.5kV; 16A; 500W; TO247
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IXYS 0
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AUD 22.2537

Multiples of: 1

      500 W   XPT     
IKQ50N120CH3XKSA1


Transistor: IGBT; 1200V; 50A; 173W; TO247-3; Series: H3
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Infineon 0
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AUD 22.5236

Multiples of: 1

      173 W        H3
IRGPS46160DPBF


International Rectifier IGBT Transistors 600V TRENCH IGBT ULTRAFAST
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Infineon 0
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AUD 22.65

Multiples of: 1

Single600 V2.2 V+/- 20 V240 A400 nA  TO - 247 - 3TubeSiThrough Hole750 W- 55 C+ 175 CTrenchstop
IXDN55N120D1


IGBT Transistors 55 Amps 1200V
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IXYS 0
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AUD 22.7417

Multiples of: 1

Single Dual Emitter1200 V2.3 V20 V    SOT - 227B - 4TubeSiSmd/Smt - 40 C+ 150 CIxdn55n120
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