IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IXXX110N65B4H1


IGBT Transistors 650V/240A TRENCH IGBT GENX4 XPT
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

IXYS 0
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AUD 21.2754
Multiples of: 1

Single650 V1.75 V20 V240 A100 nA  PLUS 247 - 3TubeSiThrough Hole880 W- 55 C+ 175 CIxxx110n65
APT40GP60BG


IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS 7 - Single
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Microchip 0
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AUD 21.285
Multiples of: 1

          Si     
IRGPS60B120KDP


Transistor: IGBT; 1200V; 120A; 595W; SUPER247
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Infineon 0
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AUD 21.3887
Multiples of: 1

Single1.2 kV2.75 V+/- 20 V120 A100 nA595 W TO - 274AATubeSiThrough Hole595 W- 55 C+ 150 C 
SGM40HF12A1TFD


611ns -40?~+150?@(Tj) 425ns 40A 1.2kV IGBT module 5.5V@250uA 413nC@40A,±15V 2.6V@20A,15V 2.2mJ 9.3mJ 1mA@1.2kV 6.58nF@25V
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Silan 0
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AUD 21.49
Multiples of: 1

                
IXYK100N65B3D1


IGBT Transistors Disc IGBT XPT-GenX3 TO-264(3)
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IXYS 0
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AUD 21.5222
Multiples of: 1

Single650 V1.53 V20 V225 A100 nA  TO - 264 - 3 SiThrough Hole830 W- 55 C+ 175 C 
IXGX120N60B


IGBT Transistors 76 Amps 600V 2.1 Rds
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IXYS 0
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AUD 21.5614
Multiples of: 1

         -      
APT40GR120B2SCD10


IGBT Transistors Insulated Gate Bipolar Transistor - Power MOS 8
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Microchip 0
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AUD 21.6127
Multiples of: 1

         TubeSi     
IXYR50N120C3D1


IGBT Transistors IGBT XPT-GENX3
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IXYS 0
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AUD 21.6185
Multiples of: 300

         TubeSi     
APT80GA90S


IGBT Transistors FG, IGBT, 900V, TO-268
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Microchip 0
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AUD 21.7538
Multiples of: 1

      625 W   POWER MOS 8®, PT     
STGE50NC60VD


IGBT Transistors N-chnl 50A-600V PowerMESH
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STMicroelectronics 0
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AUD 21.84
Multiples of: 1

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