IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IXGA30N60C3C1


IGBT Transistors G-SERIES GENX3SIC IGBT 600V 30A
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AUD 20.57
Multiples of: 1

 600 V2.6 V+/- 20 V60 A100 nA  TO - 263 - 3TubeSicSmd/Smt220 W- 55 C+ 150 CIxga30n60
SGM50HF12A1TFDT4


- IGBTs ROHS
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Silan 0
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AUD 20.5786
Multiples of: 1

                
AIKQ120N75CP2XKSA1


IGBT Transistors DISCRETE SWITCHES
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 0
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AUD 20.7041
Multiples of: 1

                
NTE3311


Transistor: IGBT; 600V; 25A; 150W; TO3P
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NTE 0
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AUD 20.7341
Multiples of: 1

      150 W         
IXXX110N65B4H1


IGBT Transistors 650V/240A TRENCH IGBT GENX4 XPT
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IXYS 0
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AUD 20.7646
Multiples of: 1

Single650 V1.75 V20 V240 A100 nA  PLUS 247 - 3TubeSiThrough Hole880 W- 55 C+ 175 CIxxx110n65
IXA27IF1200HJ


IGBT Transistors XPT IGBT Copack
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IXYS 0
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AUD 20.7778
Multiples of: 1

Single1200 V1.8 V20 V43 A500 nA  ISOPLUS 247 - 3TubeSiThrough Hole150 W- 55 C+ 150 CIxa27if1200hj
SGM40HF12A1TFD


611ns -40℃~+150℃@(Tj) 425ns 40A 1.2kV IGBT模块 5.5V@250uA 413nC@40A,±15V 2.6V@20A,15V 2.2mJ 9.3mJ 1mA@1.2kV 6.58nF@25V 2.6V@40A 80A - IGBTs ROHS
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Silan 0
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AUD 20.8078
Multiples of: 1

                
IXGT16N170AH1


IGBT Transistors 11 Amps 1700V 5 Rds
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AUD 21.0601
Multiples of: 1

  5 V     TO - 268 - 3TubeSiSmd/Smt   Ixgt16n170
IRGPS60B120KDP


Transistor: IGBT; 1200V; 120A; 595W; SUPER247
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Infineon 0
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AUD 21.3887
Multiples of: 1

Single1.2 kV2.75 V+/- 20 V120 A100 nA595 W TO - 274AATubeSiThrough Hole595 W- 55 C+ 150 C 
IXYK100N65B3D1


IGBT Transistors Disc IGBT XPT-GenX3 TO-264(3)
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IXYS 0
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AUD 21.5222
Multiples of: 1

Single650 V1.53 V20 V225 A100 nA  TO - 264 - 3 SiThrough Hole830 W- 55 C+ 175 C 
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