IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IXYH100N65A3


Discrete Semiconductor Modules Disc IGBT XPT-GenX3 TO-247AD
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

IXYS 0
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AUD 19.8411
Multiples of: 1

Single       TO - 247 - 3Tube Through Hole470 W- 55 C+ 175 C 
IXGH90N60B3


IGBT Transistors G-SERIES A3/B3/C3 GENX3 IGBT 600V 90A
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

IXYS 0
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AUD 19.8716
Multiples of: 1

      660 W   GenX3     
6MBP35XSF-060-50


IGBT DIL 6-PACK, 35A, 600V WITH O/I, O/T
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Fuji 0
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AUD 20.084
Multiples of: 1

                
IRG4PSC71KDPBF


IGBT Transistors 600V UltraFast 8-25kHz
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 0
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AUD 20.3793
Multiples of: 25

Single600 V2.3 V+/- 20 V85 A100 nA350 W TO - 274AATubeSiThrough Hole350 W- 55 C+ 150 C 
IRG7PSH73K10PBF


IGBT Transistors 1200V 220A SUPER-247
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 0
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AUD 20.5293
Multiples of: 25

Single1.2 kV2 V+/- 30 V220 A 1.15 kW TO - 274AATube Through Hole - 55 C  
APT68GA60B2D40


IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS 8 - Combi
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Microchip 0
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AUD 20.5477
Multiples of: 1

      520 W   POWER MOS 8®, PT     
CRGMF100T120FSA3


34mm IGBTs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

CRMICRO 0
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AUD 23.6534
Multiples of: 1

                
APT33GF120BRG


IGBT Transistors Insulated Gate Bipolar Transistor - NPT Low Frequency - Single
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Microchip 0
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AUD 20.72
Multiples of: 1

Single1.2 kV2.5 V30 V52 A100 nA  TO - 247 - 3TubeSiThrough Hole297 W- 55 C+ 150 C 
SGM50HF12A1TFDT4


- IGBTs ROHS
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Silan 0
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AUD 20.8478
Multiples of: 1

                
NGTB50N120FL2WG


IGBT Transistors 1200V/50A FAST IGBT FSII
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ON Semiconductor 0
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AUD 21.2025
Multiples of: 1

Single1200 V2.2 V30 V100 A200 nA535 W TO - 247TubeSiThrough Hole535 W- 55 C+ 175 CNgtb50n120fl2
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