IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

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Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IXXH140N65B4


Discrete Semiconductor Modules Disc IGBT XPT-GenX4 TO-247AD
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

IXYS 0
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AUD 18.1479

Multiples of: 1

Single       TO - 247 - 3Tube Through Hole1200 W- 55 C+ 175 C 
IXYA8N250CHV


Discrete Semiconductor Modules Disc IGBT XPT-Hi Voltage TO-263D2
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IXYS 0
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AUD 18.1791

Multiples of: 1

Single       TO - 263HV - 3Tube Smd/Smt280 W- 55 C+ 175 C 
HGTG40N60B3


IGBT Transistors 600V N-Channel IGBT UFS Series
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor 0
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AUD 18.3771

Multiples of: 30

Single600 V1.4 V+/- 20 V70 A+/- 100 nA  TO - 247 - 3TubeSiThrough Hole290 W- 55 C+ 150 CHgtg40n60b3
APT75GN60BDQ2G


IGBT Transistors IGBT Fieldstop Low Frequency Single 600 V 75 A TO-247
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Microchip 0
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AUD 18.4585

Multiples of: 1

      536 W   Field Stop     
APT40GR120S


IGBT Transistors Insulated Gate Bipolar Transistor - Power MOS 8
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Microchip 0
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AUD 18.4716

Multiples of: 1

         TubeSi     
NTE3310


Transistor: IGBT; 600V; 15A; 100W; TO3P
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NTE 0
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AUD 18.5095

Multiples of: 1

      100 W         
NTE3302


Transistor: IGBT; 600V; 8A; 30W; TO220FP
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NTE 0
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AUD 18.5143

Multiples of: 1

      30 W         
IRGPS4067DPBF


International Rectifier IGBT Transistors 600V 1.6V 120A Solar UPS Welding
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Infineon 0
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AUD 18.5216

Multiples of: 38

 600 V2.05 V20 V240 A400 nA  TO - 247 - 3-SiThrough Hole750 W   
IXA40RG1200DHGLB


IGBT Transistors XPT IGBT Phaseleg
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AUD 18.5556

Multiples of: 1

          Si    Ixa40rg1200dhglb
IXGX400N30A3


IGBT Transistors 400 Amps 300V
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AUD 18.6247

Multiples of: 1

         TubeSi    Ixgx400n30
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