IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IXSK35N120AU1


IGBT Transistors 70 Amps 1200V 4 Rds
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IXYS 0
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AUD 23.7788
Multiples of: 1

Single1200 V +/- 20 V    TO - 264AA - 3Tube Through Hole - 55 C+ 150 CIxsk35n120
CRGMF75T120FSC


34mm IGBTs ROHS
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CRMICRO 0
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AUD 24.0936
Multiples of: 1

                
IKFW75N60ET


IGBT Transistors INDUSTRY 14
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Infineon 0
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AUD 24.1729
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IXGT32N170A


IGBT Transistors 72 Amps 1700 V 5.0 V Rds
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AUD 24.2211
Multiples of: 1

Single1700 V4 V20 V    TO - 268 - 3TubeSiSmd/Smt - 55 C+ 150 CIxgt32n170
IXYK110N120C4


IGBT Transistors XPT thin-wafer technology, 4th generation (Gen 4) Trench IGBT. Disc IGBT Gen 4 XPT TO264
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AUD 24.4708
Multiples of: 1

Single1200 V - 30 V , + 30 V310 A    TubeSiThrough Hole1360 W- 55 C+ 175 C1200V XPTTM Gen 8
SGM75HF12A1TFDT4


- IGBTs ROHS
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Silan 0
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AUD 24.5398
Multiples of: 1

                
IXXX140N65B4H1


Discrete Semiconductor Modules Disc IGBT XPT-GenX4 TO-247AD
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IXYS 0
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AUD 24.5425
Multiples of: 1

Single       PLUS247 - 3Tube Through Hole1200 W- 55 C+ 175 C 
IXA30PG1200DHGLB


IGBT Transistors XPT IGBT Phaseleg
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IXYS 0
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AUD 24.5778
Multiples of: 1

Single1200 V1.9 V20 V43 A500 nA  ISOPLUS - 9 SiSmd/Smt150 W- 55 C+ 150 CIxa30pg1200dhglb
IRG4PF50WPBF


IGBT Transistors 900V Warp 20-100kHz
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Infineon 0
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AUD 24.9038
Multiples of: 1

Single900 V2.7 V+/- 20 V51 A100 nA200 W TO - 247TubeSiThrough Hole200 W- 55 C+ 150 C 
IXXK200N60B3


IGBT Transistors GenX3 XPT 600V
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IXYS 0
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AUD 25.0512
Multiples of: 1

Single600 V1.4 V20 V380 A200 nA  TO - 264 - 3TubeSiThrough Hole1.63 kW- 55 C+ 175 CIxxk200n60
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