IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
KWRFF75R12SWM


IGBTs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

JUNSHINE 0
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AUD 42.1331
Multiples of: 1

                
IXYX200N65B3


Transistor: IGBT; GenX3™; 650V; 200A; 1.56kW; PLUS247™
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IXYS 0
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AUD 42.2507
Multiples of: 1

      1.56 kW   Genx3, Xpt     
KWGFP25R12NS3


IGBTs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

JUNSHINE 0
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AUD 42.3372
Multiples of: 1

                
IXGX120N120A3


IGBT Transistors 120 Amps 1200V
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IXYS 0
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AUD 43.4057
Multiples of: 1

Single1.2 kV1.85 V20 V240 A400 nA  PLUS 247 - 3TubeSiThrough Hole830 W- 55 C+ 150 CIxgx120n120
IXBF40N160


IGBT Transistors 40 Amps 1600V
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IXYS 0
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AUD 43.96
Multiples of: 1

Single1.6 kV6.2 V20 V28 A500 nA  ISOPLUS I4 - PAC - 3TubeSiThrough Hole250 W- 55 C+ 150 CIxbf40n160
ESJ100SH60N


FD7 IGBT Transistors / Modules ROHS
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MASPOWER 0
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AUD 43.9733
Multiples of: 1

                
IXYN100N120B3H1


IGBT Transistors IGBT XPT-GENX3 SOT-227UI(
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IXYS 0
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AUD 44.3657
Multiples of: 1

         TubeSi    Planar
IXXX300N60C3


IGBT Transistors XPT 600V IGBT 300A
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IXYS 0
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AUD 44.4239
Multiples of: 1

         TubeSi    Ixxx300n60
GPU200HF120D2


IGBTs 62mm RoHS
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Daxin Semiconductor 0
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AUD 44.5401
Multiples of: 1

                
IXYX50N170C


Transistor: IGBT; XPT™; 1.7kV; 50A; 1.5kW; PLUS247™
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IXYS 0
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AUD 44.7138
Multiples of: 1

      1.5 kW   Xpt     
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