IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

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Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
MG300HF12LEC2


C2 IGBT Transistors / Modules ROHS
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AUD 74.7949

Multiples of: 1

                
VS-CPV364M4FPBF


Vishay IGBT Transistors 600 Volt 15 Amp
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AUD 74.868

Multiples of: 1

Hex600 V +/- 20 V27 A   IMS - 2 - 13BulkSiThrough Hole - 40 C+ 150 C 
IXGH48N60C3C1


IGBT Transistors 75Amps 600V
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AUD 75.8495

Multiples of: 30

        TO - 247AD - 3TubeSic    Ixgh48n60
LEGM75BF120L5H


- IGBTs ROHS
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AUD 78.7609

Multiples of: 1

                
MMIX1G320N60B3


Discrete Semiconductor Modules DISC IGBT SMPD PKG-STANDARD
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AUD 78.8806

Multiples of: 1

Single          Smd/Smt1000 W- 55 C+ 150 C 
LEGM75BE120L5H


- IGBTs ROHS
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AUD 79.6442

Multiples of: 1

                
LEGM300BH120L2K


- IGBTs ROHS
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AUD 81.0627

Multiples of: 1

                
SGM150HF12A3TFD


- IGBTs ROHS
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AUD 82.2185

Multiples of: 1

                
MG150HF12MIC2


- IGBTs ROHS
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AUD 86.1452

Multiples of: 1

                
IXGT2N250


IGBT Transistors Disc IGBT NPT-Very Hi Voltage TO-268AA
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AUD 86.6795

Multiples of: 1

Single2500 V2.6 V20 V5.5 A100 nA  TO - 268 - 3 SiSmd/Smt32 W- 55 C+ 150 C 
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