IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

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Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
MG300HF12LEC2


C2 IGBT Transistors / Modules ROHS
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Yangjie 0
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AUD 84.4084

Multiples of: 1

                
MG150HF12MIC2


- IGBTs ROHS
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Yangjie 0
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AUD 86.1452

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VS-CPV363M4FPBF


IGBT Transistors 600 Volt 8.7 Amp
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Vishay 0
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AUD 86.448

Multiples of: 1

Hex600 V +/- 20 V16 A   IMS - 2 - 13BulkSiThrough Hole - 40 C+ 150 C 
IXGT2N250


IGBT Transistors Disc IGBT NPT-Very Hi Voltage TO-268AA
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IXYS 0
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AUD 86.6795

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Single2500 V2.6 V20 V5.5 A100 nA  TO - 268 - 3 SiSmd/Smt32 W- 55 C+ 150 C 
LEGM75BF120L5H


- IGBTs ROHS
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Leading Energy 0
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AUD 87.3168

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IXYX40N450HV


IGBT Transistors High Voltage XPT IGBT
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IXYS 0
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AUD 87.8959

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        TO - 247PLUS - HV - 3TubeSiThrough Hole    
IXBF20N300


IGBT Transistors IGBT BIMSFT-VERYHIVOLT
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IXYS 0
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AUD 91.0897

Multiples of: 300

Single3 kV2.7 V+/- 20 V34 A   ISOPLUS - I4 - 3TubeSiThrough Hole150 W- 55 C+ 150 C 
FSAM50SM60A


Fairchild Semiconductor IGBT Transistors 600V -50A SMART POWER MODULE
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ON Semiconductor 0
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AUD 89.1616

Multiples of: 1

  2.4 V  250 nA  SPM32 - AATubeSiSmd/Smt100 W- 20 C+ 125 CSpm2
IXBT20N360HV


IGBT Transistors Disc IGBT BiMSFT-VeryHiVolt TO-268AA
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IXYS 0
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AUD 91.7194

Multiples of: 1

Single3600 V2.9 V20 V70 A100 nA  TO - 268HV - 3 SiSmd/Smt430 W- 55 C+ 150 C 
GPU150HF120D1SE


IGBTs 34mm RoHS
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Daxin Semiconductor 0
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AUD 92.4696

Multiples of: 1

                
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