IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IXYN82N120C3H1


IGBT Transistors XPT IGBT C3-Class 1200V/105A; Copack
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

IXYS 388
Ships to you
between Thu. 08 Oct to Mon. 12 Oct Calender.png

AUD 43.0729
Multiples of: 1

Single1200 V2.75 V30 V105 A100 nA  SOT - 227B - 4TubeSiSmd/Smt500 W- 55 C+ 150 CIxyn82n120
IKY75N120CH3XKSA1


IGBT Transistors INDUSTRY 14
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 0
6 to 16 Weeks Calender.png

AUD 25.0062
Multiples of: 1

Single1200 V2 V20 V150 A100 nA  TO 247 - 4 - 2TubeSiThrough Hole938 W- 40 C+ 175 C 
IXA40PF1200TDHGLB


IGBT Transistors SMPD IGBTs
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

IXYS 0
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AUD 25.3543
Multiples of: 1

                
IXGX82N120B3


IGBT Transistors GenX3 1200V IGBTs
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

IXYS 0
6 to 16 Weeks Calender.png

AUD 25.3881
Multiples of: 1

        TO - 247 - 3TubeSiThrough Hole   Ixgx82n120
IXXX100N60B3H1


IGBT Transistors IGBT XPT-GENX3
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

IXYS 0
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AUD 25.63
Multiples of: 300

        TO - 247 - 3TubeSiThrough Hole    
IXXH140N65C4


Transistor: IGBT; GenX4™; 650V; 140A; 1.2kW; TO247-3
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IXYS 0
6 to 16 Weeks Calender.png

AUD 25.7851
Multiples of: 1

      1.2 kW   Genx4, Trench, Xpt     
IXYX100N120B3


IGBT Transistors IGBT XPT-GENX3
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IXYS 0
6 to 16 Weeks Calender.png

AUD 26.04
Multiples of: 1

        TO - 247PLUS - 3 SiThrough Hole   Planar
LEGM25BE120E2H


- IGBTs ROHS
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Leading Energy 0
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AUD 26.0749
Multiples of: 1

                
APT102GA60B2


IGBT Transistors FG, IGBT, 600V, TO-247 T-MAX
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Microchip 0
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AUD 26.5138
Multiples of: 1

      780 W   POWER MOS 8®, PT     
IXGH24N170A


IGBT Transistors 24 Amps 1200 V 5 V Rds
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IXYS 0
6 to 16 Weeks Calender.png

AUD 26.6043
Multiples of: 300

Single1.7 kV4.5 V20 V24 A100 nA  TO - 247AD - 3TubeSiThrough Hole250 W- 55 C+ 150 CIxgh24n170
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