SiC MOSFETs

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Enter Qty Mounting StylePackage/CaseTransistor PolarityNumber of ChannelsVds - Drain-Source Breakdown VoltageId - Continuous Drain CurrentRds On - Drain-Source ResistanceVgs - Gate-Source VoltageVgs th - Gate-Source Threshold VoltageQg - Gate ChargeMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationChannel ModeQualificationTradename
  
                    
G3F20MT12J-TR


SiC MOSFETs 1200V 20mohm TO-263-7 G3F SiC MOSFET
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

GeneSiC Semiconductor 38
Ships to you
between Thu. 01 Oct to Mon. 05 Oct
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AUD 23.7914

Multiples of: 1

SMD/SMT N - Channel1 Channel1.2 kV123 A20 mOhms      Enhancement  
CDMS24783-120 SL


SiC MOSFETs 18A,1200V Through-Hole MOSFET N-Channel SiC
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Central Semiconductor 38
Ships to you
between Thu. 01 Oct to Mon. 05 Oct
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AUD 29.7471

Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV18 A150 mOhms20 V4 V55 C- 55 C+ 175 C28 WDepletion  
AIMZH120R120M1TXKSA1


SiC MOSFETs Y
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 36
Ships to you
between Thu. 01 Oct to Mon. 05 Oct
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AUD 5.2329

Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV22 A117 mOhms- 5 V , + 23 V5.1 V18 nC- 55 C+ 175 C133 WEnhancement CoolSiC
HC1M40120J


TO-263-7L Silicon Carbide Field Effect Transistor (MOSFET) ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

HXY MOS 36
Ships to you
between Fri. 09 Oct to Wed. 14 Oct
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AUD 17.2692

Multiples of: 1

                
IMZA120R014M1HXKSA1


SiC MOSFETs Y
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 36
Ships to you
between Thu. 01 Oct to Mon. 05 Oct
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AUD 29.0243

Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV127 A14 mOhms- 10 V , + 23 V4.2 V110 nC- 55 C+ 150 C455 WEnhancement  
IMZ120R090M1H


TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 35
Ships to you
between Fri. 09 Oct to Wed. 14 Oct
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AUD 8.2122

Multiples of: 1

                
TW060Z120C,S1F


SiC MOSFETs G3 1200V SiC-MOSFET TO-247-4L 60mohm
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Toshiba 34
Ships to you
between Thu. 01 Oct to Mon. 05 Oct
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AUD 10.45

Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV36 A60 mOhms- 10 V , + 25 V5 V46 nC + 175 C170 WEnhancement  
NVH4L060N065SC1


SiC MOSFETs Silicon Carbide (SiC) MOSFET, N-Channel - EliteSiC, 44mohm, 650V, M2, TO247-4L
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor 34
Ships to you
between Thu. 01 Oct to Mon. 05 Oct
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AUD 14.3629

Multiples of: 1

Through Hole N - Channel1 Channel650 V47 A70 mOhms- 8 V , + 22 V4.3 V74 nC- 55 C+ 175 C176 WEnhancement EliteSiC
C2M0025120D


SiC MOSFETs SIC MOSFET 1200V RDS ON 25 mOhm
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Wolfspeed 34
Ships to you
between Thu. 01 Oct to Mon. 05 Oct
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AUD 131.1671

Multiples of: 1

Through Hole N - Channel1 Channel1200 V90 A25 mOhms- 10 v , + 25 V2.4 V406 nC- 55 C+ 150 C463 WEnhancement  
GC3M0160120D


TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

SUPSiC 32
Ships to you
between Fri. 09 Oct to Wed. 14 Oct
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AUD 3.9283

Multiples of: 1

                
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