SiC MOSFETs

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First...4142434445...
Image  Information Image Stock Code(▲▼)Description
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(Ex. GST)(▲▼)		Enter Qty Mounting StylePackage/CaseTransistor PolarityNumber of ChannelsVds - Drain-Source Breakdown VoltageId - Continuous Drain CurrentRds On - Drain-Source ResistanceVgs - Gate-Source VoltageVgs th - Gate-Source Threshold VoltageQg - Gate ChargeMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationChannel ModeQualificationTradename
  
                    
IMZA65R057M1HXKSA1


SiC MOSFETs Y
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 128
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AUD 6.4586
Multiples of: 1

Through Hole N - Channel1 Channel650 V35 A74 mOhms- 5 V , + 23 V5.7 V28 nC- 55 C+ 175 C133 WEnhancement  
AIMZH120R060M1TXKSA1


SiC MOSFETs Y
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Infineon 127
Ships to you
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AUD 8.5486
Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV38 A60 mOhms- 5 V , + 23 V5.1 V32 nC- 55 C+ 175 C197 WEnhancement CoolSiC
AIMZA75R027M1HXKSA1


SiC MOSFETs AUTOMOTIVE_SICMOS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 127
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AUD 13.9386
Multiples of: 1

Through Hole N - Channel1 Channel750 V60 A36 mOhms- 2 V , + 20 V5.6 V49 nC- 55 C+ 175 C234 WEnhancement  
E3M0040120K


SiC MOSFETs SiC, MOSFET, 40mO, 1200V, TO-247-4, Automotive
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Wolfspeed 126
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AUD 10.4186
Multiples of: 1

                
NVH4L030N120M3S


SiC MOSFETs Silicon Carbide (SiC) MOSFET- EliteSiC, 30 mohm, 1200 V, M3S, TO247-4L Silicon Carbide (SiC) MOSFET- EliteSiC, 30 mohm, 1200 V, M3S, TO247-4L
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ON Semiconductor 117
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AUD 28.3171
Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV60 A28.5 mOhms- 8 V , + 22 V3.13 V107 nC- 55 C+ 175 C308 WEnhancement EliteSiC
GC3M0120090D


TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
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SUPSiC 116
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AUD 5.9491
Multiples of: 1

                
GC2M0045170D


TO247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
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SUPSiC 114
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AUD 39.7186
Multiples of: 1

                
GC3M0075120D


TO247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
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SUPSiC 103
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AUD 5.371
Multiples of: 1

                
C3M0016120K


SiC MOSFETs SiC MOSFET G3 1200V 16mOhms
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Wolfspeed 101
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AUD 26.73
Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV115 A28.8 mOhms- 4 V , + 15 V1.8 V211 nC- 40 C+ 175 C556 WEnhancement  
SP25N120CTF


TO-247 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
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Siliup 97
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AUD 2.2988
Multiples of: 1

                
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First...4142434445...

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