SiC MOSFETs

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Enter Qty Mounting StylePackage/CaseTransistor PolarityNumber of ChannelsVds - Drain-Source Breakdown VoltageId - Continuous Drain CurrentRds On - Drain-Source ResistanceVgs - Gate-Source VoltageVgs th - Gate-Source Threshold VoltageQg - Gate ChargeMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationChannel ModeQualificationTradename
  
                    
E3M0075120D


SiC MOSFETs 1.2kV 75mOHMS E3M AUTO AECQ101
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Wolfspeed 89
Ships to you
between Thu. 01 Oct to Mon. 05 Oct
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AUD 20.4914

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Through Hole N - Channel1 Channel1.2 kV32 A75 mOhms- 8 V , + 19 V3.6 V57 nC- 55 C+ 175 C145 WEnhancementAEC - Q101 
IXSJ80N120R1K


SiC MOSFETs 1200V 18mohm (30A a. 25C) SiC MOSFET in isolated TO247-4L
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

IXYS 87
Ships to you
between Thu. 01 Oct to Mon. 05 Oct
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AUD 35.0586

Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV85 A23.4 mOhms21 V4.8 V155 nC- 40 C+ 150 C223.2 WEnhancement  
G3R20MT17N


SiC MOSFETs 1700V 20mohm SOT-227 G3R SiC MOSFET
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

GeneSiC Semiconductor 85
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between Thu. 01 Oct to Mon. 05 Oct
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AUD 192.5786

Multiples of: 1

Screw Mount N - Channel1 Channel1.7 kV92 A20 mOhms- 5 V , + 15 V2.7 V256 nC- 55 C+ 175 C476 WEnhancement  
SCT3105KRC14


SiC MOSFETs 1200V Nch SiC Trench MOSFET in 4pin Package - SCT3105KR is a trench gate structure SiC MOSFET ideal for server power supplies, solar inverters, and electric vehicle charging stations. A 4pin package that separates the power source terminal and driver
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ROHM 84
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between Thu. 01 Oct to Mon. 05 Oct
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AUD 22.77

Multiples of: 1

Through Hole N - Channel1 Channel1200 V24 A137 mOhms- 4 v to 22 V5.6 V51 nC- 55 C+ 175 C134 WEnhancement  
SCT3030ALGC11


SiC MOSFETs N-Ch 650V SiC 70A 30mOhm TrenchMOS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ROHM 81
Ships to you
between Thu. 01 Oct to Mon. 05 Oct
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AUD 34.98

Multiples of: 1

Through Hole N - Channel1 Channel650 V70 A30 mOhms22 V5.6 V104 nC- 55 C+ 175 C262 WEnhancement  
NVBG020N120SC1


SiC MOSFETs SIC MOS D2PAK-7L 20MOHM 1
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ON Semiconductor 81
Ships to you
between Thu. 01 Oct to Mon. 05 Oct
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AUD 58.6771

Multiples of: 1

SMD/SMT N - Channel1 Channel1.2 kV98 A28 mOhms- 15 V , + 25 V4.3 V220 nC- 55 C+ 175 C468 WEnhancementAEC - Q101EliteSiC
GC3M0075120D


TO247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
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SUPSiC 79
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between Fri. 09 Oct to Wed. 14 Oct
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AUD 5.2376

Multiples of: 1

                
GC3M0080120K


TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
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SUPSiC 77
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between Fri. 09 Oct to Wed. 14 Oct
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AUD 4.7291

Multiples of: 1

                
NSF080120L3A0Q


SiC MOSFETs TO247 1.2KV 36A N-CH SIC
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Nexperia 77
Ships to you
between Thu. 01 Oct to Mon. 05 Oct
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AUD 6.4185

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Through Hole N - Channel1 Channel1.2 kV36 A120 mOhms- 10 V , + 22 V2.9 V44 nC- 55 C+ 175 C202 WEnhancement  
SP35N120CTF


TO-247-3L Silicon Carbide Field Effect Transistor (MOSFET) ROHS
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Siliup 77
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between Fri. 09 Oct to Wed. 14 Oct
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AUD 8.2161

Multiples of: 1

                
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