SiC MOSFETs

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Enter Qty Mounting StylePackage/CaseTransistor PolarityNumber of ChannelsVds - Drain-Source Breakdown VoltageId - Continuous Drain CurrentRds On - Drain-Source ResistanceVgs - Gate-Source VoltageVgs th - Gate-Source Threshold VoltageQg - Gate ChargeMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationChannel ModeQualificationTradename
  
                    
IMZC120R026M2HXKSA1


SiC MOSFETs CoolSiC MOSFET discrete 1200V, 26 mohm G2
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 134
Ships to you
between Thu. 20 Nov to Mon. 24 Nov
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AUD 16.0111

Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV69 A25 mOhms- 10 V , + 25 V5.1 V124 nC- 55 C+ 175 C289 WEnhancement CoolSiC
TW048N65C,S1F


SiC MOSFETs G3 650V SiC-MOSFET TO-247 48mohm
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Toshiba 131
Ships to you
between Thu. 20 Nov to Mon. 24 Nov
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AUD 17.76

Multiples of: 1

Through Hole N - Channel1 Channel650 V40 A65 mOhms- 10 V , + 25 V5 V41 nC- 55 C+ 175 C132 WEnhancement  
IMTA65R026M2HXTMA1


SiC MOSFETs CoolSiC MOSFET 750 V G2
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 126
Ships to you
between Thu. 20 Nov to Mon. 24 Nov
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AUD 11.3841

Multiples of: 1

SMD/SMT N - Channel 650 V79 A33 mOhms- 7 V to + 23 V5.6 V42 nC- 55 C+ 175 C357 WEnhancement CoolSiC
NVBG040N120SC1


SiC MOSFETs Silicon Carbide (SiC) MOSFET, N-Channel - EliteSiC, 40 mohm, 1200 V, M1, D2PAK-7L Silicon Carbide MOSFET, N?Channel, 1200 V, 40 m?, D2PAK?7L
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor 126
Ships to you
between Thu. 20 Nov to Mon. 24 Nov
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AUD 31.219

Multiples of: 1

SMD/SMT N - Channel1 Channel1.2 kV60 A56 mOhms- 15 V , + 25 V4.3 V106 nC- 55 C+ 175 C357 WEnhancement EliteSiC
NTH4L028N170M1


SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 28 mohm, 1700 V, M1, TO-247-4L
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor 125
Ships to you
between Thu. 20 Nov to Mon. 24 Nov
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AUD 49.046

Multiples of: 1

Through Hole N - Channel1 Channel1.7 kV81 A40 mOhms- 15 V , + 25 V4.3 V200 nC- 55 C+ 175 C535 WEnhancement EliteSiC
AIMW120R035M1HXKSA1


SiC MOSFETs Y
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 124
Ships to you
between Thu. 20 Nov to Mon. 24 Nov
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AUD 39.6

Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV52 A35 mOhms- 7 V , + 23 V4.5 V59 nC- 55 C+ 175 C228 WEnhancement CoolSiC
SCT3040KLGC11


SiC MOSFETs N-Ch 1200V SiC 55A 40mOhm TrenchMOS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ROHM 117
Ships to you
between Fri. 14 Nov to Thu. 20 Nov
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AUD 47.619

Multiples of: 1

Through Hole N - Channel1 Channel1200 V55 A40 mOhms- 4 v , 22 V2.7 V107 nC- 55 C+ 175 C262 WEnhancement  
NTH4L040N120M3S


SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M3S, TO-247-4L Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M3S, TO-247-4L
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor 103
Ships to you
between Fri. 28 Nov to Wed. 03 Dec
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AUD 9.7755

Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV51 A52 mOhms- 10 V , + 22 V4.4 V70 nC- 55 C+ 175 C329 WEnhancement EliteSiC
Hot SCT2H12NZGC11


SiC MOSFETs 1700V 3.7A N-MOSFET Silicon Carbide SiC
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ROHM 102
Ships to you
between Fri. 28 Nov to Wed. 03 Dec
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AUD 3.8381

Multiples of: 1

Through Hole N - Channel1 Channel1.7 kV3.7 A1.5 Ohms22 V1.6 V14 nC- 55 C+ 175 C35 WEnhancement  
GC2M0080120K


TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

SUPSiC 0
6 to 16 Weeks Calender.png

AUD 7.0919

Multiples of: 1

                
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