MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
FDD8882


N-Channel 30 V 12.6A (Ta), 55A (Tc) 55W (Tc) Surface Mount TO-252AA
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ON Semiconductor 2027
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AUD 0.8263
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55 A30 V11.5 mOhmsn - channel  - 55 C+ 175 C55 Wsmd/smtTO - 252Reelsi1 channel20 V enhancement powertrench
RD3T050CNTL1


MOSFET Nch 200V 5A TO-252 (DPAK)
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ROHM 2026
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AUD 0.7831
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5 A200 V760 mOhmsN - Channel 3.25 V- 55 C+ 150 C29 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel30 V8.3 nCEnhancement  
ZVN4525E6TA


250V 230mA 1.1W 8.5O@10V,500mA N Channel SOT-26 MOSFETs ROHS
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Diodes Incorporated 2025
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AUD 0.7205
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   N - Channel  - 55 C+ 150 C Smd/SmtSOT - 23 - 6Reel       
Si4101DY-T1-GE3


Vishay Semiconductors MOSFET -30V .006Ohm10V 25.7A P-Ch G-III
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Vishay 2025
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AUD 1.2376
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- 25.7 A- 30 V8 mOhmsP - Channel - 1 v to - 2.5 V- 55 C+ 150 C6 WSmd/SmtSO - 8ReelSi1 Channel20 V65 nCEnhancement Trenchfet
BSP88 H6327


Infineon Technologies MOSFET N-Ch 240V 350mA SOT-223-3
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Infineon 2024
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AUD 0.2742
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350 mA240 V6 OhmsN - Channel 1 V- 55 C+ 150 C1.8 WSmd/SmtPG - SOT223Reel-1 Channel+/- 20 V4.5 nCEnhancement  
FDMC8882


MOSFET 30V N-Channel Power Trench 174 MOSFET
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ON Semiconductor 2024
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AUD 0.6124
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16 A30 V14.3 mOhmsN - Channel  - 55 C+ 150 C18 WSmd/SmtMLP 3.3 x 3.3ReelSi1 Channel20 V7 nC , 14 nC  Powertrench
PSMN1R2-30YLC,115


MOSFET N-Ch 30V 1.25mOhms
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Nexperia 2023
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AUD 0.8767
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100 A30 V1.25 mOhmsN - Channel 1.46 V- 55 C+ 175 C215 WSmd/SmtLFPAKReelSi1 Channel20 V78 nC   
SI7633DP-T1-GE3


MOSFET -20V Vds 20V Vgs PowerPAK SO-8
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Vishay 2023
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AUD 1.3744
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   P - Channel  - 55 C+ 150 C Smd/SmtPOWERPAK SO - 8ReelSi     Trenchfet
IPD50N03S2L-06


MOSFET OPTIMOS PWR-TRANS N-CH 30V 50A 6.4mOhm
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Infineon 2023
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AUD 2.4038
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50 A30 V6.4 mOhmsN - Channel  - 55 C+ 175 C136 WSmd/SmtTO - 252ReelSi1 Channel20 V EnhancementAec - Q101Optimos
ZVP4424ASTZ


Diodes Incorporated MOSFET P-Chnl 240V
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Diodes Incorporated 2015
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AUD 0.7996
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- 200 mA- 240 V9 OhmsP - Channel40 V- 2 V- 55 C+ 150 C750 mWThrough HoleTO - 92 - 3BulkSi1 Channel40 V Enhancement  
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