MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
FDMC007N30D


MOSFET PT8+ TECH. 30V DUAL N-CHA
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ON Semiconductor 2037
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AUD 0.2904
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         Smd/SmtPOWER - 33 - 8Cut TapeSi      
PSMN045-100HLX


MOSFETs PSMN045-100HL/SOT1205/LFPAK56D
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Nexperia 2037
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AUD 0.8012
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21 A100 V45 mOhmsN - Channel 2.1 V- 55 C+ 175 C53 WSMD/SMTLFPAK - 56D - 8Reel , Cut TapeSi2 Channel- 10 V , + 10 V18.5 nCEnhancement  
SI7464DP-T1-E3


Vishay Semiconductors MOSFET 200V 2.8A 4.2W 240mohm 10V
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Vishay 2036
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AUD 0.6806
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1.8 A200 V240 mOhmsN - Channel20 V - 55 C+ 150 C1.8 WSmd/SmtSO - 8Reel    Enhancement  
SI4136DY-T1-GE3


MOSFET 20V 46A 7.8W
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Vishay 2036
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AUD 1.1963
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         Smd/SmtSO - 8-Si     Trenchfet
IPB095N20NM6ATMA1


MOSFETs OptiMOS 6 Power-Transistor, 200 V
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Infineon 2036
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AUD 4.0388
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116 A200 V8.7 mOhmsN - Channel 4.5 V- 55 C+ 175 C300 WSMD/SMTPG - TO263 - 3Reel , Cut TapeSi1 Channel20 V53 nCEnhancement OptiMOS
STD95N4F3


STMicroelectronics MOSFET N Ch 40V 5.4mOhm 80A
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STMicroelectronics 2035
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AUD 1.8388
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80 A40 V5.8 mOhmsN - Channel 4 V- 55 C+ 175 C110 WSMD/SMTDPAK - 3 (TO - 252 - 3)Reel , Cut TapeSi1 Channel- 20 V , 20 V40 nCEnhancementAEC - Q100STripFET
IPB015N06NF2SATMA1


MOSFETs N
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Infineon 2034
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AUD 3.4806
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195 A60 V1.5 mOhmsN - Channel 2.1 V- 55 C+ 175 C250 WSMD/SMTD2PAK - 3 (TO - 263 - 3)Reel , Cut TapeSi1 Channel- 20 V , + 20 V155 nCEnhancement StrongIRFET
IPL60R140CFD7AUMA1


MOSFET HIGH POWER_NEW
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Infineon 2034
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AUD 4.0962
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18 A600 V140 mOhmsN - Channel 3.5 V- 40 C+ 150 C106 WSmd/SmtVSON - 4Cut TapeSi1 Channel20 V35 nCEnhancement  
IRFR120NTRPBF-JSM


TO-252 MOSFETs ROHS
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JSMSEMI 1998
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AUD 0.2787
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IRF640NPBF


200V 18A 150mΩ@10V,11A 150W 4V@250uA N Channel +175℃@(Tj) TO-220C MOSFETs ROHS
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JSMSEMI 1881
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AUD 0.4282
Multiples of: 5

                   
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