MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
STL26NM60N


MOSFET N-Ch 600V 0.160 Ohm 19A HV Mdmesh II
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STMicroelectronics 2023
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AUD 3.6612
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   N - Channel     Smd/SmtPowerflat 8X8Reel       
IXTA1N200P3HV


MOSFET 2000V/1A HV Power MOSFET, TO-263HV
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IXYS 2023
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AUD 9.9657
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1 A2 kV40 Ohmsn - channel 2 V- 55 C+ 150 C125 Wsmd/smtTO - 263 - 3Tubesi 20 V23.5 nCenhancement  
JSM50N06D


TO-252 MOSFETs ROHS
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JSMSEMI 2022
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AUD 0.1086
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IRFR5505PBF-HXY


60V 15A 70m 1PCSPChannel TO-252-2L MOSFETs ROHS
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HXY MOS 2022
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AUD 0.2222
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IRLR7843TRPBF-ES


30V 95A 58W 2.9m@10V,30A 1.5V@250uA 1 N-Channel TO-252 MOSFETs ROHS
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ElecSuper 2022
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AUD 0.3437
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BSC077N12NS3GATMA1


Transistor: N-MOSFET; unipolar; 120V; 98A; 139W; PG-TDSON-8
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Infineon 2022
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AUD 1.8388
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            Optimos 3      
BSO301SP H


MOSFET P-Ch -30V -14.9A DSO-8 OptiMOS P
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Infineon 2021
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AUD 1.4685
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14.9 A30 V8 mOhmsP - Channel  - 55 C+ 150 C2.5 WSmd/SmtPG - DSO - 8ReelSi1 Channel20 V- 102 nCEnhancement Optimos
GS-065-011-1-L-TR


MOSFET 650V, 11A, GaN E-mode, 5x6 PDFN, Bottom-side cooled
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Gan Systems 2020
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AUD 3.3164
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11 A650 V150 mOhmsN - Channel 1.5 V- 40 C+ 150 C-SMD/SMTPDFN - 6Reel , Cut TapeGaN - on - Si1 Channel- 10 V , + 7 V2 nCEnhancement  
CJMN2012


20V 12A 10mΩ@4.5V,5A 700mV@250uA 450pF@4V N Channel 1800pF@4V 32nC@5V +150℃@(Tj) DFNWB2x2-6L MOSFETs ROHS
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Changjing Electronics Technology 1988
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AUD 0.1213
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NCE40P20Q


DFN-8L(3.3x3.3) MOSFETs ROHS
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NCE Power 1886
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AUD 0.4127
Multiples of: 5

                   
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