MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

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Vgs - Gate-Source Breakdown Voltage
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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRFS7430TRL7PP


Trans MOSFET N-CH 40V 522A 7-Pin D2PAK T/R
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Infineon 2115
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between Thu. 06 Aug to Tue. 11 Aug
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AUD 1.6559

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522 A40 V0.75 mOhmsN - Channel20 V3 V  375 WSmd/SmtD2PAK - 7ReelSi1 Channel20 V305 nC  Strongirfet
RT1A060APTR


Trans MOSFET P-CH Si 12V 6A Automotive 8-Pin TSST T/R
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ROHM 2114
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between Wed. 29 Jul to Fri. 31 Jul
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AUD 0.3586

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6 A12 V14 mOhmsP - Channel 1 V- 55 C+ 150 C1.25 WSmd/SmtTSST - 8Tape And ReelSi1 Channel- 8 V80 nCEnhancement  
RD3L04BBLHRBTL


MOSFETs Nch 60V 40A, TO-252 (DPAK), Power MOSFET for Automotive
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ROHM 2114
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between Wed. 29 Jul to Fri. 31 Jul
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AUD 0.857

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40 A60 V13.6 mOhmsN - Channel 4 V- 55 C+ 175 C53 WSMD/SMTTO - 252 - 3Reel , Cut TapeSi1 Channel- 20 V , + 20 V12.1 nCEnhancement  
DMN10H700S-13


MOSFET MOSFET BVDSS: 61V-100V
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Diodes Incorporated 2113
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between Wed. 29 Jul to Fri. 31 Jul
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AUD 0.1199

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  700 mOhmsN - Channel     Smd/SmtSOT - 23 - 3Cut TapeSi      
MSK60N03DF


DFN3X3-8L MOSFETs ROHS
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MSKSEMI 2111
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between Thu. 06 Aug to Tue. 11 Aug
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AUD 0.3333

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NVMFD5C446NLWFT1G


MOSFET T6 40V LL S08FL DS
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ON Semiconductor 2111
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between Wed. 29 Jul to Fri. 31 Jul
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AUD 3.6448

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145 A40 V2.2 mOhms , 2.2 mOhmsN - Channel 1.2 V- 55 C+ 175 C125 WSmd/SmtDFN - 8Cut TapeSi2 Channel20 V54 nC , 54 nCEnhancementAec - Q101 
YFW8N65AD


650V 8A 100W 950mΩ@10V,4A 4V@250μA null TO-252-2 MOSFETs ROHS
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YFW Electronics 2110
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between Thu. 06 Aug to Tue. 11 Aug
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AUD 0.2736

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NVMFS5C442NAFT1G


MOSFET T6-D3F 40V NFET
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ON Semiconductor 2110
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between Wed. 29 Jul to Fri. 31 Jul
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AUD 1.2773

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140 A40 V1.9 mOhmsN - Channel 2 V- 55 C+ 175 C83 WSmd/SmtSO - FL - 8Cut TapeSi1 Channel10 V32 nCEnhancementAec - Q101 
2N7002DW-VB


60V 2 N-Channel SC70-6 MOSFETs ROHS
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VBsemi Elec 2109
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between Thu. 06 Aug to Tue. 11 Aug
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AUD 0.0776

Multiples of: 5

                   
IPD65R400CE


MOSFET CONSUMER
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Infineon 2099
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between Thu. 06 Aug to Tue. 11 Aug
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AUD 0.7074

Multiples of: 1

                   
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