MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
AUIRF7316QTR


International Rectifier MOSFET AUTO -30V DUAL P-CH HEXFET 0.042 RDSon
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Infineon 2121
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AUD 2.8918
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- 4.9 A- 30 V58 mOhmsP - Channel - 3 V- 55 C+ 150 C2 WSmd/SmtSO - 8ReelSi2 Channel20 V23 nCEnhancementAec - Q101 
SISS5812DN-T1-GE3


MOSFETs N-CHANNEL 80-V (D-S) MOSFET
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Vishay 2120
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AUD 0.6321
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42.8 A80 V13.5 mOhmsN - Channel 4 V- 55 C+ 150 C44.6 WSMD/SMTPOWERPAK - 1212 - 8SReel , Cut TapeSi1 Channel- 20 V , 20 V10 nCEnhancement TrenchFET
OSD2N65


650V 2A 22W 4 TO-252 MOSFETs ROHS
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OSEN 2119
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AUD 0.0903
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SE3080K


MOSFET N Trench 30V 80A 3V @ 250uA 6.5 mΩ @ 30A,10V TO-252-2 (DPAK) RoHS
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SINO-IC 2119
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AUD 0.0983
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FDD6670A(UMW)


TO-252 MOSFETs ROHS
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Youtai 2119
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AUD 0.1366
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SWD4N60D


600V 4A 1.9Ω TO-252 MOSFETs ROHS
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Sam&wing 2119
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AUD 0.2037
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IRFHS8242TRPBF


International Rectifier MOSFET 25V 1 N-CH HEXFET 13mOhms 4.3nC
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Infineon 2119
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AUD 0.275
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9.9 A25 V17 mOhmsN - Channel20 V1.8 V- 55 C+ 150 C2.1 WSmd/SmtPQFN - 6ReelSi1 Channel20 V4.3 nC   
AGM303MNA


PDFN-8(5x6) MOSFETs ROHS
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AGM-Semi 2119
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AUD 0.3417
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P0903BDG-VB


TO-252 MOSFETs ROHS
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VBsemi Elec 2118
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AUD 0.3405
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RD3P04BBKHRBTL


MOSFETs Nch 100V 36A, TO-252 (DPAK), Power MOSFET for Automotive
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ROHM 2118
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AUD 0.8685
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36 A100 V30 mOhmsN - Channel 2.5 V- 55 C+ 175 C53 WSMD/SMTTO - 252 - 3Reel , Cut TapeSi1 Channel- 20 V , + 20 V9.1 nCEnhancement  
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