MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BSC070N10NS3GATMA1


Transistor: N-MOSFET; unipolar; 100V; 90A; 114W; PG-TDSON-8
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Infineon 2118
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between Thu. 06 Aug to Tue. 11 Aug
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AUD 0.9919

Multiples of: 1

            Optimos 3      
CSD25211W1015


Texas Instruments MOSFET PCh NexFET Power MOSFET
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Texas Instruments 2117
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between Wed. 29 Jul to Fri. 31 Jul
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AUD 0.2824

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- 3.2 A- 20 V33 mOhmsP - Channel - 800 mV- 55 C+ 150 C1 WSmd/SmtDSBGA - 6ReelSi1 Channel- 6 V3.4 nC  Nexfet
IAUS300N08S5N012TATMA1


MOSFET MOSFET_(75V 120V(
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Infineon 2117
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between Wed. 29 Jul to Fri. 31 Jul
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AUD 4.8104

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300 A80 V1.2 mOhmsN - Channel 3.8 V- 55 C+ 175 C375 WSMD/SMTHSOG - 8Cut Tape , ReelSi1 Channel- 20 V , + 20 V178 nCEnhancement  
IPD50N04S308ATMA1


MOSFET MOSFET_(20V 40V)
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Infineon 2116
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between Thu. 23 Jul to Wed. 29 Jul
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AUD 1.1771

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           Reel       
CSD17579Q5A


MOSFET 30-V, N channel NexFET power MOSFET, single SON 5 mm x 6 mm, 13.3 mOhm 8-VSONP
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Texas Instruments 2115
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between Thu. 06 Aug to Tue. 11 Aug
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AUD 0.3919

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20 A30 V11.6 mOhmsN - Channel     Smd/SmtVSONP - 8Tape And ReelSi1 Channel20 V Enhancement Nexfet
AUIRFR540ZTRL


International Rectifier MOSFET Automotive MOSFET 1 100V, 26 mOhm, DPAK
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Infineon 2115
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between Wed. 29 Jul to Fri. 31 Jul
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AUD 2.0522

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35 A100 V22.5 mOhmsn - channel     smd/smtDPAK - 3Reelsi    aec - q101 
BC3134KT


SOT-523 MOSFETs ROHS
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Hong Kong Chuangji 2114
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between Thu. 06 Aug to Tue. 11 Aug
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AUD 0.0222

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SI2302DS-T1-GE3-ES


20V 3.5A 350mW 36m@10V,3.5A 1V@250uA 1PCSNChannel SOT-23 MOSFETs ROHS
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ElecSuper 2095
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between Thu. 06 Aug to Tue. 11 Aug
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AUD 0.0214

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WTM3400


30V 5.8A 31mΩ@4.5V,5A 1.4W 700mV@250uA null SOT-23 MOSFETs ROHS
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WPMtek 2075
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between Thu. 06 Aug to Tue. 11 Aug
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AUD 0.0191

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ISC0802NLSATMA1


MOSFETs TRENCH >=100V
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Infineon 1951
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between Thu. 06 Aug to Tue. 11 Aug
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AUD 1.9565

Multiples of: 1

                   
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