MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
RS3E130ATTB1


MOSFETs SOP8 P-CH 30V 13A
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ROHM 2192
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AUD 1.4793
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13 A30 V8.5 mOhmsP - Channel 2.5 V- 55 C+ 150 C2 WSMD/SMTSOP - 8Reel , Cut TapeSi1 Channel- 20 V , 20 V83 nCEnhancement  
DMPH6050SK3-13


60V 50mO@10V,7A 1.9W P Channel TO-252 MOSFETs ROHS
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Diodes Incorporated 2190
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AUD 0.7021
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23.6 A60 V50 mOhmsP - Channel 1 V- 55 C+ 175 C1.9 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel- 10 V25 nCEnhancement  
SISS26LDN-T1-BE3


MOSFETs N-CHANNEL 60-V (D-S) MOSFET
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Vishay 2190
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AUD 0.7273
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81.2 A60 V4.3 mOhmsN - Channel 2.5 V- 55 C+ 150 C4.8 WSMD/SMT1212 - 8S Si1 Channel- 20 V , 20 V15.2 nC   
DMN3032LQ-7


MOSFETs MOSFET BVDSS: 8V-24V SOT23 T&R 3K
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Diodes Incorporated 2188
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AUD 0.179
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5.4 A30 V31 mOhmsN - Channel 2 V- 55 C+ 150 C800 mWSMD/SMTSOT - 23 - 3Reel , Cut TapeSi1 Channel- 20 V , + 20 V10.1 nCEnhancement  
SQ4153EY-T1_GE3


MOSFET P Ch -12Vds 8Vgs AEC-Q101 Qualified
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Vishay 2188
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AUD 2.3194
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25 A12 V5.1 mOhmsP - Channel 900 mV- 55 C+ 175 C7.1 WSMD/SMTSOIC - 8Reel , Cut TapeSi1 Channel- 8 V , 8 V101 nCEnhancementAEC - Q101TrenchFET
NVD5C434NT4G


MOSFET T6 40V SL IN DPAK
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ON Semiconductor 2188
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AUD 2.594
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163 A40 V1.7 mOhmsN - Channel 2 V- 55 C+ 175 C117 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel20 V80.6 nCEnhancementAec - Q101 
FDBL0630N150


Fairchild Semiconductor MOSFET
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ON Semiconductor 2188
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AUD 4.6955
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169 A150 V5 mOhmsn - channel20 V2 V- 55 C+ 175 C500 Wsmd/smtMO - 299A - 8Cut Tapesi1 channel20 V70 nCenhancement powertrench
IRF9333TR(UMW)


SOP-8 MOSFETs ROHS
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Youtai 2187
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AUD 0.0947
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DMP2100UQ-7


Transistor: P-MOSFET; unipolar; -20V; -3.4A; 0.8W; SOT23
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Diodes Incorporated 2187
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AUD 0.1672
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NCE0117K


MOSFET N Trench 100V 17A (Tc) 2.5V @ 250uA 70 mΩ @ 5A,10V TO-252-2 (DPAK) RoHS
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NCE Power 2030
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AUD 0.3627
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